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Characterization of doped GaInP nanowires for photovoltaics (Caracterización de nanohilos the GaInP con distintos dopados para aplicaciones en energía fotovoltaica)

Barrutia Poncela, Laura (2011) Characterization of doped GaInP nanowires for photovoltaics (Caracterización de nanohilos the GaInP con distintos dopados para aplicaciones en energía fotovoltaica). Tesis Master's thesis.

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Abstract

The interest in renewable energy sources has increased recently, which has resulted in increasing research in solar energy as an environmentally friendly way to obtain electricity. Direct harvesting of solar energy to electricity is called photovoltaics, where III-V semiconductors nanowires can be used to fabricate multijunction solar cells with promise to deliver high efficiency at low cost.
The division of Solid State Physics at Lund University has been working during the last few years on a project for the fabrication of a tandem p-n junction solar cell. In this thesis project, doped nanowires of GaInP have been investigated and evaluated with optical and electrical measurements, with the aim to create high-bandgap p-n junctions. Electrical measurements show that both p- and n-doping can be achieved. Nanowires with p-i-n doping show excellent rectification with reasonably low ideality
factors, and generate a clear photocurrent under illumination. Under forward bias, the p-i-n devices give yellow electroluminescence in agreement with photoluminescence experiments.[RESUMEN] El interés en las energias renovables ha crecido recientemente resultando en una gran motivación por la energía solar, la cual no causa gran impacto medioambiental a la hora de obtener electricidad. En relación con la energía fotovoltaica, nanohilos de materiales semiconductores del grupo III-V pueden ser usados para fabricar multiuniones de células solares prometiendo una mayor eficiencia y un bajo coste.
El departamento de Física del Estado Sólido de la Universidad de Lund ha estado trabajando durante los últimos años en el projecto AMON-RA con el fin de obtener una nueva tecnología basada en la obtención de una célula solar tipo tándem con el uso de nanohilos semiconductores del grupo III-V. En este projecto de Máster, uniones p-n de nanohilos de GaInP dopados han sido investigados y caracterizados con medidas ópticas y eléctricas con el fin de obtener un alto gap de energía prohibida necesario en este projecto AMON-RA mencionado anteriormente.Contactos p y n han sido capaz de ser fabricados y estudiados. Uniones p-i-n han sido caracterizadas obteniendo una excelente curva de rectificación y fotocorriente al iluminar el dispositivo, con un razonable factor de idealidad. Por otro lado, la aplicación de voltaje en el dispositivo ha dado lugar a la emisión de luz en el rango amarillo, resultado que concuerda con las medidas de fotoluminiscencia obtenidas.

Item Type:Thesis (Master's thesis)
Additional Information:Máster de Física Aplicada. Facultad de Ciencias Físicas. Curso 2010-2011
Directors:
DirectorsDirector email
Borgström, Magnus T. magnus.borgstrom@ftf.lth.se
Wallentin, Jesper jesper.wallentin@ftf.lth.se
Hidalgo Alcalde, Pedro phidalgo@fis.ucm.es
Uncontrolled Keywords:Semiconductors Nanowires, Photoluminescence, Electroluminescence, Photocurrent, Field Effect Transistor, p-n Junction, Doping, Multijunction Devices, Nanohilos Semiconductores, Fotoluminiscencia, Electroluminiscencia, Fotocorriente, Transistor de Efecto, Campo, Unión p-n, Dopado, Dispositivos Multi-Unión.
Subjects:Sciences > Physics > Materials
ID Code:13792
References:

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Deposited On:10 Nov 2011 13:37
Last Modified:24 Nov 2011 09:25

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