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Wave fronts may move upstream in semiconductor superlattices



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Carpio, Ana y Bonilla, L.L. y Wacker, A. y Schöll, E. (2000) Wave fronts may move upstream in semiconductor superlattices. Physical Review E, 61 (5). ISSN 1539-3755

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URL Oficial: http://journals.aps.org/pre/pdf/10.1103/PhysRevE.61.4866

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In weakly coupled, current biased, doped semiconductor superlattices. domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.

Tipo de documento:Artículo
Palabras clave:Electric-field domains; Gaas-Alas superlattices; Negative differential conductivity; Charge-density waves; ; Transport phenomenon; Self oscillations; Bifurcation; Stability; Dynamics
Materias:Ciencias > Física > Física matemática
Código ID:15104
Depositado:04 May 2012 11:59
Última Modificación:28 Oct 2016 08:32

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