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Wave fronts may move upstream in semiconductor superlattices


Carpio Rodríguez, Ana María and Bonilla, L.L. and Wacker, A. and Schöll, E. (2000) Wave fronts may move upstream in semiconductor superlattices. Physical Review E, 61 (5). ISSN 1539-3755


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In weakly coupled, current biased, doped semiconductor superlattices. domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.

Item Type:Article
Uncontrolled Keywords:Electric-field domains; Gaas-Alas superlattices; Negative differential conductivity; Charge-density waves; ; Transport phenomenon; Self oscillations; Bifurcation; Stability; Dynamics
Subjects:Sciences > Physics > Mathematical physics
ID Code:15104
Deposited On:04 May 2012 11:59
Last Modified:20 Apr 2015 12:23

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