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Crecimiento de bismuto sobre sustratos semiconductores por electrodeposición (Electrodeposition of bismuth on semiconductor substrates)


Prados Díaz, Alicia (2012) Crecimiento de bismuto sobre sustratos semiconductores por electrodeposición (Electrodeposition of bismuth on semiconductor substrates). [Trabajo Fin de Máster]

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El bismuto (Bi) es un semimetal con propiedades electrónicas muy interesantes incluyendo una longitud de onda de Fermi grande que lo convierte en un potencial
candidato para la observación de efectos cuánticos de tamaño (QSE) en nanoestructuras. Para poder observarlos es necesario obener películas ultra delgadas y de alta
calidad sobre sustratos aislantes o semiconductores. En este trabajo presentamos un estudio del crecimiento de películas delgadas de Bi sobre sustratos semiconductores
de GaAs, con diferentes orientaciones y dopados. Se muestra como, en condiciones de oscuridad, el potencial de crecimiento y la morfología de las películas depende
fuertemente de la orientación. Voltametrías cíclicas y la morfología de las películas crecidas, estudiada con AFM, sugiere la presencia de una capa de hidrógeno adsorbida en la superficie del sustrato que dificulta la nucleación de la película, aumentando la rugosidad y disminuyendo el grado de compactación. Las muestras con mejores propiedades - baja rugosidad y mejor orientación - han sido obtenidas en los sustratos de GaAs de menor dopado.
[ABSTRACT] Bismuth (Bi) is a semimetal with very interesting electronic properties including a long Fermi wavelength which make it a potential candidate for the observation of quantum size effects (QSE) in nanostructures. For this observation, high quality
ultra-thin Bi films have to be grown on insulating or semiconducting substrates. In this work we present a study of the growth of Bi thin flms on GaAs semiconductor
substrates, with different orientations and doping. We show that, under dark conditions, growth potential ando films morphology strongly depends on the orientation. Cyclic voltammetries and the morphology of the grown films, studied by AFM, suggest the presence of an adsorbed hydrogen layer on the substrate surface that hinders the nucleation of the film, increasing the roughness and decreasing the compactness. The samples with best properties - low roughness and better orientation - have been obtained in the lowest doped GaAs substrates.

Item Type:Trabajo Fin de Máster
Additional Information:

Máster de Física Aplicada. Facultad de Ciencias Físicas. Curso 2011-2012

DirectorsDirector email
Ranchal Sánchez, Rocío
Pérez García,
Uncontrolled Keywords:Electrodeposición, Voltametría Cíclica, Electroquímica de Semiconductores, Películas Delgadas, Hidrógeno Adsorbido, Rugosidad, Electrodeposition, Cyclic Voltametry, Semiconductor Electrochemistry, Thin Films, Adsorbed Hydrogen, Roughness
Subjects:Sciences > Physics > Electronics
ID Code:16645

[1] C. Kittel. Introduction to Solid State Physics. John Wiley & Sons (4th edition), New York, 1971.

[2] G. Smith, G. A. Baraff, and J. M. Rowell. Effective g factor of electrons and holes in bismuth. Physical Review, 135(4):1118-1124, 1964.

[3] N. García, Y. H. Kao, and M Strongin. Galvanomagnetic studies of bismuth films in the quantum-size-effect region. Physical Review B, 5(6):2029-2039, 1972.

[4] M. Murata et al. Mean free path limitation of thermoelectric properties of bismuth nanowire. Journal of Applied Physics, 105:113706, 2009.

[5] C. L. Chien K. Liu and P. C. Searson. Finite-size effects in bismuth nanowires. Physical Review B, 58(22), 1998.

[6] S. Farhangfar. Quantum size effects in a one- dimensional semimetal. Physical Review B", YEAR = 2006, volume = 74, pages = 205318.

[7] D. A. Borca-Tasciuc, M. S. Martín-González, A. Prieto, A. Stacy, T. Sands, G. Chena, M. A. Ryan, and J. P. Fleurial. Thermal properties of electrodeposited bismuth telluride nanowiresembedded in amorphous alumina. Applied Physics Letters, 85(24):6001-6003, 2004.

[8] M. Rudolph and J. J. Heremans. Electronic and quantum phase coherence properties of bismuth thin films. Applied Physics Letters, 100(24):241601, 2012.

[9] J. Chang, H. Kim, J. Han, M. H. Jeon, and W. Y. Lee. Microstructure and magnetoresistance of sputtered bismuth thin flms upon annealing. Journal of Applied Physics, 98(2):02390, 2005.

[10] D. Kim, S. Lee, J. Kim, and G. Lee. Structure and electrical transport properties of bismuth thin films prepared by rf magnetron sputtering. Applied Surface Science, 252:3525-3531., 2006.

[11] P. M. Vereecken and P. C. Searson. Electrochemical formation of gaas/bi schottky barriers. Applied Physics Letters, 75(20):3135-3137, 1999.

[12] F. Y. Yang, K. Liu, K. Hong, D. H. Reich, P. C. Searson, and C. L. Chien. Large magnetoresistance of electrodeposited single-crystal bismuth thin films. Science, 284(5418):1335-1337, 1999.

[13] L. J. Gao, P. Ma, K. M. Novogradecz, and P. R. Norton. Characterization of permalloy thin films electrodeposited on si(111) surfaces. Journal of Applied Physics, 81(11):7595-7599, 1997.

[14] M. Darques, A. Bogaert, F. Elhoussine, S. Michotte, J. de la Torre Medina, A. Encinas, and L. Piraux. Controlled growth of cocu nanowires and application to multilayered cocu/cu nanowires with selected anisotropy. Journal of Physics D: Applied Physics, 39:5025-5032, 2006.

[15] P. M. Vereecken, L. Sun, P. C. Searson, M. Tanase, D. H. Reich, and C. L. Chien. Magnetotransport properties of bismuth films on p-gaas. Journal of Applied Physics, 88(11):6529-6535, 2000.

[16] P. M. Vereecken, K. R. Chunxin Ji, and P. C. Searson. Electrodeposition of bismuth thin films on n-gaas(110). Applied Physics Letters, 86(12):121916, 2005.

[17] V. Myamlin and Y. V. Pleskov. Electrochemistry of semiconductors. Plenum Press, 1967.

[18] M. Paunovic and M. Schlesinger. Fundamentals of Electrochemical Deposition. Wiley- Interscience, 2006.

[19] A. Bard and L. Faulkner. Electrochemical Methods. John Wiley & Sons, 1980.

[20] Southampton Electrochemistry Group. Instrumental Methods in Electrochemistry. Ellis Horwood/Wiley, 1985.

[21] Instruments for electrochemists.

[22] M. Plaza Domínguez. Magnetotransporte en materiales electrodepositados. Tesis Doctoral, 2009.

[23] M. C. Traub, J. S. Biteen, B. S. Brunschwig, and N. S. Lewis. Passivation of gaas nanocrystals by chemical functionalization. Journal of the American Chemical Society, 130(3):955-964, 2008.

[24] M. Plaza, M. Abuin, A. Mascaraque, M. A. González-Barrio, and L. Pérez. Epitaxial growth of bi ultra-thin films on gaas by electrodeposition. Materials Chemistry and Physics, 134:523-530, 2012.

[25] A. Chanda, S. Verma, and C. Jacob. Etching of gaas substrates to create as-rich surface. Bulletin of Material Science, 30(6):561-565, 2007.

[26] T. Süunner, R. Herrmann, A. Löffler, M. Kamp, and A. Forchel. Fine-tuning of gaas photonic crystal cavities by digital etching. Microelectronic Engineering, 184:1405-1407, 2007.

[27] A. W. Bott. Electrochemistry of semiconductors. Current Separations, 17:3:87-91, 1998.

[28] W.G. Schmidt. Iii-v compound semiconductor (001) surfaces. Applied Physics A, 75:89-99, 2002.

[29] S. Y. Tong, A. R. Lubinsky, B. J. Mrstik, and M. A. Hove. Surface bond angle and bond lengths of rearranged as and ga atoms on gaas(110). Physical Review B, 17(8):3303-3309., 1978.

[30] P. M. Vereecken and P. C. Searson. Electrochemical deposition of bi on gaas. Electrochemical Society Proceedings, 2000-29:431-440, 2000.

Deposited On:22 Oct 2012 12:40
Last Modified:20 Nov 2012 10:01

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