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Crecimiento de bismuto sobre sustratos semiconductores por electrodeposición (Electrodeposition of bismuth on semiconductor substrates)

Prados Díaz, Alicia (2012) Crecimiento de bismuto sobre sustratos semiconductores por electrodeposición (Electrodeposition of bismuth on semiconductor substrates). [Trabajo Fin de Máster]

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Abstract

El bismuto (Bi) es un semimetal con propiedades electrónicas muy interesantes incluyendo una longitud de onda de Fermi grande que lo convierte en un potencial
candidato para la observación de efectos cuánticos de tamaño (QSE) en nanoestructuras. Para poder observarlos es necesario obener películas ultra delgadas y de alta
calidad sobre sustratos aislantes o semiconductores. En este trabajo presentamos un estudio del crecimiento de películas delgadas de Bi sobre sustratos semiconductores
de GaAs, con diferentes orientaciones y dopados. Se muestra como, en condiciones de oscuridad, el potencial de crecimiento y la morfología de las películas depende
fuertemente de la orientación. Voltametrías cíclicas y la morfología de las películas crecidas, estudiada con AFM, sugiere la presencia de una capa de hidrógeno adsorbida en la superficie del sustrato que dificulta la nucleación de la película, aumentando la rugosidad y disminuyendo el grado de compactación. Las muestras con mejores propiedades - baja rugosidad y mejor orientación - han sido obtenidas en los sustratos de GaAs de menor dopado.
[ABSTRACT] Bismuth (Bi) is a semimetal with very interesting electronic properties including a long Fermi wavelength which make it a potential candidate for the observation of quantum size effects (QSE) in nanostructures. For this observation, high quality
ultra-thin Bi films have to be grown on insulating or semiconducting substrates. In this work we present a study of the growth of Bi thin flms on GaAs semiconductor
substrates, with different orientations and doping. We show that, under dark conditions, growth potential ando films morphology strongly depends on the orientation. Cyclic voltammetries and the morphology of the grown films, studied by AFM, suggest the presence of an adsorbed hydrogen layer on the substrate surface that hinders the nucleation of the film, increasing the roughness and decreasing the compactness. The samples with best properties - low roughness and better orientation - have been obtained in the lowest doped GaAs substrates.


Item Type:Trabajo Fin de Máster
Additional Information:

Máster de Física Aplicada. Facultad de Ciencias Físicas. Curso 2011-2012

Directors:
DirectorsDirector email
Ranchal Sánchez, Rocío rociran@fis.ucm.es
Pérez García, Lucaslucas.perez@fis.ucm.es
Uncontrolled Keywords:Electrodeposición, Voltametría Cíclica, Electroquímica de Semiconductores, Películas Delgadas, Hidrógeno Adsorbido, Rugosidad, Electrodeposition, Cyclic Voltametry, Semiconductor Electrochemistry, Thin Films, Adsorbed Hydrogen, Roughness
Subjects:Sciences > Physics > Electronics
ID Code:16645
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Deposited On:22 Oct 2012 12:40
Last Modified:20 Nov 2012 10:01

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