Complutense University Library

Inducción de sucesos aislados en memoria SRAM (Induced single events in SRAMs)

Palomar Trives, Carlos (2012) Inducción de sucesos aislados en memoria SRAM (Induced single events in SRAMs). Tesis Master's thesis.

[img] PDF
2MB
View download statistics for this eprint

==>>> Export to other formats

Abstract

Este proyecto consiste en emular los errores producidos en memorias semiconductoras por la radiación atmosférica mediante un láser pulsado que actúa de modo semejante a un ión. Se realiza un mapa de sensibilidad de la memoria identificando los puntos susceptibles de error y cuántos errores simultáneos se producen. Para ello es necesario realizar pasos muy delicados como desencapsular la memoria, construir placas de test tanto para el circuito examinado como para el sistema de caracterización, conseguir, mediante
obturadores, la incidencia de un único pulso sobre la memoria, diseñar un sistema de adquisición de datos, fijar la energía y camino óptico del láser pulsado así como controlar de manera automática la posición en el plano XY
donde incide el láser. Los resultados muestran que algunas zonas de la memoria son insensibles al láser en tanto que otras tienen una sensibilidad extremadamente alta. Por otra parte, se observa la existencia de dos tipos distintos de errores, uno llamado Single Event Upset (SEU) y, otro menos
habitual, llamado Single Event Micro-latchup. [ABSTRACT] This project is to emulate the errors in semiconductor memories for atmospheric radiation by pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors occur simultaneously. This requires very delicate steps, like unencapsulate memory, build test boards for the
studied circuit and the characterization system, getting, through shutters, the incidence of a single pulse on memory, design an acquisition system data, set the energy laser and laser optical path and automatically controlling the position in the XY plane where the laser hits. The results show that some memory zones are insensitive to the laser while others have an extremely high sensitivity. Moreover, two distinct types of errors are observed, one called Single Event Upset (SEU) and other less common, called Single Event Micro-latchup.

Item Type:Thesis (Master's thesis)
Additional Information:Máster en Física Aplicada. Facultad de Ciencias Físicas.Curso 2011-2012
Directors:
DirectorsDirector email
Franco, Francisco J.fjfranco@fis.ucm.es
Uncontrolled Keywords:Memoria, Circuito, Radiación, Láser, Single Event Effect, Single Event Upset, Múltiple Bit Upset, Latch Up, Sensibilidad, Memory, Circuit, Radiation, Laser, Efecto Puntual, Suceso Aislado, Suceso Aislado Múltiple, Latch Up, Sensitivity.
Subjects:Sciences > Physics > Electronics
ID Code:17205
References:

[AD06] P. C. Adell, A. F. Witulski, R. D. Schrimpf, R. Marec, V. Pouget, P. Calvel, and F. Bezerra, “Single event-induced instability in linear voltage regulators,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3506–3511, December 2006.

[AL05] M. Alderighi, A. Candelori, F. Casini, S. D'Angelo, M. Mancini, A. Paccagnella, S. Pastore, G.R. Sechi, “Heavy Ion Effects on Configuration Logic of Virtex FPGAs”, 11th IEEE International On-Line Testing Symposium, July 2005, pp 49-53.

[AR04] J. M. Armani, G. Simon, and P. Poirot, “Low-Energy Neutron Sensitivity of Recent Generation SRAMs,” IEEE Transactions on Nuclear Science, vol. 51, pp. 2811-2816, December 2004.

[BA98] C. Barillot, O. Serres, R. Marec and P. Calvel, “Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation”, IEEE Transactions on Nuclear Science, Vol. 45, nº 6, pp. 2638-2643, December 1998.

[BE04] S. Bertazzoni, D. Di Giovenale, M. Salmeri, A. Mencattini, A. Salsano, M. Florean, “Monitoring methodology for TID damaging of SDRAM devices based on retention time analysis”, Defect and Fault Tolerance in VLSI Systems, 2004.

[BO02] Y. Boulghassoul, L. W. Massengill, A. L. Sternberg, R. L. Pease, S. Buchner, J. W. Howard, D. McMorrow, M. W. Savage, and C. Poivey, “Circuit modeling of the LM124 operational amplifier for analog single-event transient analysis,” IEEE Transactions on Nuclear Science, vol. 49, pp. 3090–3096, December 2002.

[BO04] Y. Boulghassoul, S. Buchner, D. McMorrow, V. Pouget, L. W. Massengill, P. Fouillat, W. T. Holman, C. Poivey, J. W. Howard, M. Savage, and M. C. Maher, “Investigation of millisecond-long analog single-event transients in the LM6144 op amp,” IEEE Transactions on Nuclear Science, vol. 51, pp. 3529–3536, December 2004.

[BU94] S. Buchner, J. B. Langworthy, W. J. Stapor, A. B. Campbell, and S. Rivet,“Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser,” IEEE Transactions on Nuclear Science, vol. 41, pp. 2195–2202, December 1994.

[BU00a] S. P. Buchner, T. J. Meehan, A. B. Campbell, K. A. Clark, and D. McMorrow, “Characterization of single-event upsets in a flash analog-to-digital converter (AD9058),” IEEE Transactions on Nuclear Science, vol. 47, pp. 2358–2364, December 2000.

[BU00b] S. Buchner, A. B. Campbell, T. Meehan, K. A. Clark, D. McMorrow, C. Dyer, C. Sanderson, C. Comber, and S. Kuboyama, “Investigation of single-ion multiple-bit upsets in memories onboard a space experiment,” IEEE Transactions on Nuclear Science, vol. 47, pp. 705–711, June 2000.

[BU04a] S. Buchner, J. J. Howard, C. Poivey, D. McMorrow, and R. Pease, “Pulsedlaser testing methodology for single event transients in linear devices,”IEEE Transactions on Nuclear Science, vol. 51, pp. 3716–3722, December 2004.

[BU04b] S. Buchner, M. A. Carts, D. McMorrow, K. Hak, P. W. Marshall, and K. A. Label, “Characteristics of single-event upsets in a fabric switch (AD8151),” IEEE Transactions on Nuclear Science, vol. 51, pp. 2840– 2845, October 2004.

[CH03] W. Chen, V. Pouget, H. J. Barnaby, J. D. Cressler, G. Niu, P. Fouillat, Y. Deval, and D. Lewis, “Investigation of single-event transients in voltage-controlled oscillators,” IEEE Transactions on Nuclear Science, vol. 50, pp. 2081–2087, December 2003.

[CH05] A. M. Chugg, R. Jones, M. J. Moutrie, P. H. Duncan, R. H. Sorensen, S. Mattsson, S. Larsson, R. Fitzgerald, and T. O’Shea, “Laser simulation of single event effects in pulse width modulators,” IEEE Transactions on Nuclear Science, vol. 52, pp. 2487–2494, December 2005.

[CH06] W. Chen, V. Pouget, G. K. Gentry, H. J. Barnaby, B. Vermeire, B. Bakkaloglu, K. Kiaei, K. E. Holbert, and P. Fouillat, “Radiation hardened by design rf circuits implemented in 0.13 mm CMOS technology,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3449–3454, December 2006.

[DE00] M. Dentan, “Radiation Effects on Electronics Components and Circuits”, CERN training course, Ginebra (Suiza), 10-12 de Abril de 2000.

[DU00] S. Duzellier, D. Falguere, L. Guibert, V. Pouget, P. Fouillat, and R. Ecoffet, “Application of laser testing in study of SEE mechanisms in 16-mbit DRAMs,” IEEE Transactions on Nuclear Science, vol. 47, pp. 2392–2399, December 2000.

[FR05] Franco, F. J., “El Amplificador Operacional bajo radiación de neutrones rápidos y consecuencias en otros dispositivos”, Tesis Doctoral, Universidad Complutense de Madrid, 2005.

[GE03] J. George et al., “SEE Sensitivity Trends in Non-hardened High Density SRAMs with Sub-micron Feature Sizes,” in IEEE Radiation Effects Data Workshop Rec., pp. 83-88, July 2003.

[GI00] K. Gill, “Radiation effects on electronics components and systems for the LHC”, CERN training course, Ginebra (Suiza), 10-12 de Abril de 2000.

[GO93] C. A. Gossett, B. W. Hughlock, M. Katoozi, G. S. LaRue and S. A. Wendler, “Single event phenomena in atmospheric neutron environments”, IEEE Transactions on Nuclear Science, vol. 40, pp. 1845–1856, 1993.

[HA00] T.P. Haraszit, “CMOS Memory Circuits”, Kluwer Academic Publishers, 2000.

[HTTP-UCM] http://www.ucm.es/info/mpifemto/laseres.html.

[JO99] R. Jones, A. M. Chugg, C. M. S. Jones, P. H. Duncan, C. S. Dyer, and C. Sanderson, “Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility,” in Fifth European Conference on Radiation and Its Effects on Components and Systems, 1999 (RADECS99), (Fontevraud (France)), pp. 148–153, September 1999.

[JO00] R. Jones, A. M. Chugg, C. M. S. Jones, P. H. Duncan, C. S. Dyer, and C. Sanderson, “Comparison between SRAM SEE cross-sections from ion”.

[JO01] R. Jones and A. M. Chugg, “Utilisation of pulsed laser for SEE testing. Study at two wavelengths,” tech. rep., European Space Agency (ESA), May 2001.

[JO06] A. H. Johnston, T. F. Miyahira, F. Irom, and J. S. Laird, “Single-event transients in voltage regulators,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3455–3461, December 2006.

[KU00] S. Kuboyama, T. Suzuki, T. Hirao and S. Matsuda, “Mechanism for Single- Event Burnout of Bipolar Transistor”, IEEE Transactions on Nuclear Science, Vol. 47, nº. 6, pp. 2634-2639, December 2000.

[LA02] S. D. LaLumondiere, R. Koga, P. Yu, M. C. Maher, and S. C. Moss, “Laser induced and heavy ion-induced single-event transient (SET) sensitivity measurements on 139-type comparators,” IEEE Transactions on Nuclear Science, vol. 49, pp. 3121– 3128, December 2002.

[LA04] T.E.Langley, P. Murray, “SEE and TID test results of 1 Gb flash memories”, IEEE Radiation Effects Data Workshop, July 2004, pp 58 – 61.

[LA06] J. S. Laird, T. Hirao, S. Onoda, H. Itoh, and A. Johnston, “Comparison of above bandgap laser and MeV ion induced single event transients in highspeed Si photonic devices,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3312–3320, December 2006.

[LO10] I. López Calle, “Emulación de los efectos de la radiación ionizante en dispositivos analógicos mediante láser pulsado de femtosegundo sintonizable”, Tesis Doctoral, Universidad Complutense de Madrid, 2010.

[MA79] T.C. May and M.H. Woods, "Alpha-Particle-Induced Soft Errors in Dynamic Memories", IEEE Trans. Elec. Dev. ED-26, 2, 1979.

[MA02] D. G. Mavi and P. H. Eaton, “Soft error rate mitigation techniques for modern microcircuits,” in Proc. 40th Annual Reliability Physics Symp., 2002, pp. 216–225.

[MI01] T. F. Miyahira, A. H. Johnston, H. N. Becker, S. D. LaLumondiere, and S. C. Moss, “Catastrophic latchup in CMOS analog-to-digital converters,” IEEE Transactions on Nuclear Science, vol. 48, pp. 1833–1840, December 2001.

[MO04] D. McMorrow, S. Buchner, W. T. Lotshaw, J. S. Melinger, M. Maher, and M. W. Savage, “Single-event effects induced by two-photon-absorption: Overview and current status,” in 5th Radiation Effects on Components and Systems (RADECS) Workshop (E. Ragel, R. Tamayo, and C. Sánchez de la Fuente, eds.), (Madrid (Spain)), pp. 305–310, September, 22-24th 2004.

[NI11] M. Nicolaidis, “Soft Errors in Modern Electronic Systems”, Springer Science, vol. 41, 2011.

[PO04] V. Pouget, D. Lewis, and P. Fouillat, “Time-resolved scanning of integrated circuits with a pulsed laser: application to transient fault injection in an ADC,” IEEE Transactions on Instrumentation and Measurement, vol. 53, pp. 1227–1231, August 2004.

[SA01] M. V. Savage, T. Turflinger, J. W. Howard Jr. and S. Buchner, “A compendium of single event transient data”, Proceedings of the 2001 IEEE Radiation Effects Data Workshop, pp. 134-141, Vancouver (Canada), July, 16th-20th, 2001.

[SU88] G. P. Summers, E. A. Burke, M. A. Xapsos, C. J. Dale, P. W. Marshall and E. L. Petersen, “Displacement Damage in GaAs structures” IEEE Transactions on Nuclear Science, Vol. 35, nº 6, pp. 1121-1226, December 1988.

[SU06] A. K. Sutton, R. Krithivasan, P. W. Marshall, M. A. Carts, C. Seidleck, R. Ladbury, J. D. Cressler, C. J. Marshall, S. Currie, R. A. Reed, G. Niu, B. Randall, K. Fritz, D. McMorrow, and B. Gilbert, “SEU error signature analysis of Gbit/s SiGe logic circuits using a pulsed laser microprobe,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3277–3284, December 2006.

[SZ81] S. M. Sze, “Physics of Semiconductor Devices”, Second Edition, John Wiley & Sons, Inc. U.S.A, 1981.

[TO99] Y. Tosaka, H. Kanata, T. Itakura and S. Satoh, “Simulation Technologies for Cosmic Ray Neutron-Induced Soft Errors: Models and Simulation Systems”, IEEE Transactions On Nuclear Science, vol. 46, no. 3, June 1999, pp. 774-779.

[ZI81] J. F. Ziegler and W. A. Lanford, “The effect of sea level cosmic rays on electronic devices”, J. Appl. Phys., vol. 52, pp. 4305–4318, 1981.

[ZI04] J.F. Ziegler, H. Puchner, "SEE-History, Trends and Challenges", Cypress Semiconductor Corporation, Cap. III. 2004.

Deposited On:27 Nov 2012 11:55
Last Modified:08 Feb 2013 12:27

Repository Staff Only: item control page