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Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals



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Hidalgo Alcalde, Pedro y Plaza, J. L. y Méndez Martín, Bianchi y Dieguez, E. y Piqueras de Noriega, Javier (2002) Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals. Journal of Physics: Condensed Mater, 14 (48). pp. 13211-13215. ISSN 0953-8984

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URL Oficial: http://iopscience.iop.org/0953-8984/14/48/370

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The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the crystals and spectral broadening. Deconvolution of the CL spectra reveals the existence of four components. The presence of erbium oxide induces a decrease of the 746 meV emission characteristic of Te-doped samples. CL images show a complex distribution of recombination centres which depends to a large extent on he local Te concentration.

Tipo de documento:Artículo
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© 2002 IOP Publishing Ltd.
This work was supported by MCYT (Project MAT2000-2119).
Conference on Extended Defects in Semiconductors (EDS 2002)(2002. Bologna, Italia)

Palabras clave:Doped Gasb, Erbium, Luminescence, Centers, Silicon
Materias:Ciencias > Física > Física de materiales
Código ID:24424
Depositado:31 Ene 2014 16:50
Última Modificación:06 Jun 2014 13:37

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