Universidad Complutense de Madrid
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Effect of erbium doping on the defect structure of GaSb crystals

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Hidalgo Alcalde, Pedro y Méndez Martín, Bianchi y Piqueras de Noriega, Javier y Plaza, J. y Dieguez, E. (1998) Effect of erbium doping on the defect structure of GaSb crystals. Semiconductor Science and Technology, 13 (12). pp. 1431-1433. ISSN 0268-1242

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URL Oficial: http://iopscience.iop.org/0268-1242/13/12/017


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Resumen

GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentrations, Er-Sb precipitates form and doping becomes less efficient in suppressing the accepters. In these samples intraionic Er luminescence is observed.


Tipo de documento:Artículo
Información Adicional:

© 1998 IOP Publishing Ltd.
This work has been supported by DGES (PB96-0639) and by CICYT (ESP95-0148 and 95-0086-OP).

Palabras clave:Phase Epitaxy, Cathodoluminescence, Photoluminescence, Spectroscopy, Excitation
Materias:Ciencias > Física > Física de materiales
Código ID:24713
Depositado:18 Mar 2014 16:30
Última Modificación:06 Jun 2014 17:24

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