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Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies

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Hidalgo Alcalde, Pedro y Méndez Martín, Bianchi y Piqueras de Noriega, Javier y Dutta, P.S. y Diéguez, E. (1998) Decoration of extended defects in GaSb by Al doping as evidenced by cathodoluminescence studies. Solid State Communications, 108 (12). pp. 997-1000. ISSN 0038-1098

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URL Oficial: http://www.sciencedirect.com/science/article/pii/S0038109898004451


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Resumen

The effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous along the growth axis with the exception of the top end which showed Al accumulation. The CL results show decoration of extended defects by Al but contrary to the case of other dopants Al has not been found to cause a significative reduction of native accepters. A CL band at about 850 meV appears to be related to the presence of aluminium.


Tipo de documento:Artículo
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© 1998 Elsevier Science Ltd. All rights reserved.
Acknowledgements—GrowtThis work was supported by DGES (PB96-0639) and by CICYT (ESP95-0148 and 95-0086-OP).

Palabras clave:Liquid-Phase Epitaxy, Gallium Antimonide, Doped Gasb, Growth
Materias:Ciencias > Física > Física de materiales
Código ID:24776
Depositado:20 Mar 2014 18:22
Última Modificación:06 Jun 2014 13:48

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