Universidad Complutense de Madrid
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Effect of erbium on the luminescence properties of GaSb crystals



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Hidalgo Alcalde, Pedro y Méndez Martín, Bianchi y Piqueras de Noriega, Javier y Plaza, J. L. y Diéguez, E. (1998) Effect of erbium on the luminescence properties of GaSb crystals. Solid State Phenomena, 63-64 . pp. 215-220. ISSN 1012-0394


The interest of rare earth doping of semiconductors has increased in the last years due to its possible applications in optical devices requiring temperature stability. Advantages of these systems are the presence of a sharp temperature independent rare-earth luminescence and the possibility of activation of the emitting rare-earth centers by minority carrier injection. In this work the effect of erbium doping on the luminescence and on the native accepters of GaSb crystals has been investigated by CL-SEM. Er doping has been found to increase the total CL intensity and to produce spectral changes that depend on the erbium concentration. At moderate doping the native acceptor concentration, as detected by the luminescence band A, decreases. At high Er concentrations Er-Sb precipitates form and doping appears not to be efficient in the suppression of accepters. X-ray microanalysis reveals that the composition of the precipitates is Er-5 Sb-3. Emission from intraionic transitions of Er is observed in highly doped crystals.

Tipo de documento:Artículo
Palabras clave:Liquid-Phase Epitaxy, Longitudinal Mode-Operation, Sb-Rich Solutions, Doped Inp, Photoluminescence, Gaas, Spectroscopy, Excitation, Lasers
Materias:Ciencias > Física > Física de materiales
Código ID:24779
Depositado:20 Mar 2014 18:26
Última Modificación:06 Jun 2014 17:32

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