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Application of scanning electron acoustic microscopy to the characterization of n-type and semiinsulating GaAs

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Méndez Martín, Bianchi y Piqueras de Noriega, Javier (1992) Application of scanning electron acoustic microscopy to the characterization of n-type and semiinsulating GaAs. Applied Physics Letters, 60 (11). pp. 1357-1359. ISSN 0003-6951

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URL Oficial: http://dx.doi.org/10.1063/1.107485


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A series of GaAs wafers with different doping levels and electrical resistivity has been used to investigate the scanning electron acoustic microscopy (SEAM) application to the characterization of this material. It has been found that SEAM is particularly useful to characterize semi-insulating GaAs as compared with n-type material. The SEAM signal generation mechanisms in GaAs are discussed.


Tipo de documento:Artículo
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©2001. All Rights Reserved.
This work was supported by the Volkswagen Foundation, by the Comision Interministerial de Ciencia y Tecnologia (Project MAT 90-47) and by DGICYT-DAAD. The authors thank Wacker-Chemitronic (Doctor K. Lohnert ) for providing the samples.

Palabras clave:Signal
Materias:Ciencias > Física > Física de materiales
Código ID:25071
Depositado:11 Abr 2014 17:24
Última Modificación:11 Abr 2014 17:24

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