Universidad Complutense de Madrid
E-Prints Complutense

Cathodoluminescence and positron-annihilation study of defect distribution in III-V wafers

Impacto

Descargas

Último año

Domínguez-Adame Acosta, Francisco y Méndez Martín, Bianchi y Piqueras de Noriega, Javier y De Diego, N. y LLopis, J. y Moser, P. (1989) Cathodoluminescence and positron-annihilation study of defect distribution in III-V wafers. Revue de Physique Appliquee, 24 (6). p. 179. ISSN 0035-1687

URL Oficial: http://dx.doi.org/10.1051/jphyscol:1989633




Resumen

Positron annihilation (PA) is a sensitive technique for detection of vacancy-type defects in crystals, that has been widely used in recent years to study defects in semiconductors (1). On the other side, CL and other luminescence techniques have been applied (2) to study the defect distribution in semiconductor wafers. In some cases PA can be useful to interpret results obtained by CL-SEM (3). In this work PA and CL have been used to investigate the distribution and nature of defects in GaP : S, GaAs : Te and undoped SI GaAs wafers. CL intensity, dislocation density and vacancy concentration profiles have been measured. The latter has been obtained by positron lifetime measurements.


Tipo de documento:Artículo
Información Adicional:

© Editions Physique

Palabras clave:Physics, Multidisciplinary
Materias:Ciencias > Física > Física de materiales
Código ID:25122
Depositado:24 Abr 2014 16:34
Última Modificación:13 Nov 2014 08:49

Descargas en el último año

Sólo personal del repositorio: página de control del artículo