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Thermal stability of intermediate band behavior in Ti implanted Si

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Mártil de la Plaza, Ignacio y González Díaz, Germán y Olea Ariza, Javier (2010) Thermal stability of intermediate band behavior in Ti implanted Si. Solar Energy Materials and Solar Cells, 94 (11). pp. 1907-1911. ISSN 0927-0248

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URL Oficial: http://dx.doi.org/10.1016/j.solmat.2010.06.045


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Resumen

Ti implantation in Si with very high doses has been performed. Subsequent Pulsed Laser Melting (PLM) annealing produces good crystalline lattice with electrical transport properties that are well explained by the Intermediate Band (IB) theory. Thermal stability of this new material is analyzed by means of isochronal annealing in thermodynamic equilibrium conditions at increasing temperature. A progressive deactivation of the IB behavior is shown during thermal annealing, and structural and electrical measurements are reported in order to find out the origin of this result.


Tipo de documento:Artículo
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© 2010 Elsevier B.V. All rights reserved. The authors would like to acknowledge the Nanotechnology and Surface Analysis Services of the Universidad de Vigo C.A.C.T.I. for ToF-SIMS measurements and C.A.I. de Técnicas Físicas of the Universidad Complutense de Madrid for ion implantation and e-beam evaporation experiments. This work was made possible thanks to the FPI (Grant no .BES-2005-7063) of the Ministerio de Educación y Ciencia de España. This work was partiallys upported by the Projects NUMANCIA-II (No. S2009ENE-1477) funded by the Comunidad de Madrid and GENESIS-FV (No. CSD2006-00004) funded by the Spanish Consolider National Programme.

Palabras clave:Ion-Implantation, Silicon Layers, Solar Cells, Semiconductor, Efficiency, Diffusion, Alloys.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:25846
Depositado:16 Jun 2014 10:42
Última Modificación:11 Dic 2014 10:02

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