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Comparison of electrical and luminescence data for the A center in CdTe

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Castaldini, A. y Cavallini, A. y Fraboni, B. y Fernández Sánchez, Paloma y Piqueras de Noriega, Javier (1997) Comparison of electrical and luminescence data for the A center in CdTe. Applied Physics Letters, 69 (23). pp. 3510-3512. ISSN 0003-6951

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URL Oficial: http://dx.doi.org/10.1063/1.117228




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We have investigated the electrical and optical properties of the deep levels responsible for the 1.4-1.5 eV luminescence band usually observed in II-VI compounds. We compared the energy levels found by cathodoluminescence and junction spectroscopy methods for semi-insulating (CdTe:Cl and Cd_(0.8)Zn_(0.2)Te) and semiconducting samples (undoped CdTe). The techniques utilized were deep level transient spectroscopy (DLTS) on semiconducting samples and photoinduced current transient spectroscopy and photo-DLTS on high resistivity materials. These last two techniques are complementary and allow the determination of the trap character (donor/acceptor). Three acceptor levels are seen in the electrical transient data at E(upsilon)+0.12, 0.14, and 0.16 eV with hole capture cross sections of 2x10^(-16), 1x10(-16), and 4X10^(-17) cm(2), respectively. The lowest level is seen only in Cl doped material corroborating the literature optical and electron spin resonance identification of a level at E_(upsilon)+0.12 eV as being a V_Cd+Cl_Te, donor-acceptor pair center. All three levels may be present in the 1.4 eV luminescence band.


Tipo de documento:Artículo
Información Adicional:

This research has been partially supported by the Cooperation Programme ‘‘Azione Integrata’’ between Italy and Spain and by DGICYT (Project PB 93-1256). The authors are indebted to the Japan Energy Corporation for Corporation for the undoped and doped samples.

Palabras clave:Cadmium Telluride, Transient Spectroscopy, Point-Defects, Deep Levels, Crystals, Cathodoluminescence, Cd_(1-x)Zn_xTe, Detectors, Cl
Materias:Ciencias > Física > Física de materiales
Código ID:26713
Depositado:30 Sep 2014 16:14
Última Modificación:30 Sep 2014 16:14

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