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Effect of ion beam milling on the defect structure of CdTe

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Panin, G. N. y Fernández Sánchez, Paloma y Piqueras de Noriega, Javier (1996) Effect of ion beam milling on the defect structure of CdTe. Semiconductor Science and Technology, 11 (9). pp. 1354-1357. ISSN 0268-1242

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URL Oficial: http://dx.doi.org/10.1088/0268-1242/11/9/018


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http://iopscience.iop.orgEditorial


Resumen

The effect of ion milling on the defect structure of CdTe crystals has been investigated in the scanning electron microscope by cathodoluminescence. Enhancement in the luminescence intensity is observed after ion treatment. Luminescence spectra of treated and untreated zones of the samples indicate that ion milling causes generation of tellurium vacancies and filling of cadmium vacancies in a subsurface layer. In addition, enhancement of the concentration of cadmium vacancy related defects in the region extending up to 20 mu m from the layer is revealed. This effect is discussed in connection with models of p- to n-type conversion of CdTe during ion milling.


Tipo de documento:Artículo
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© 1996 IOP Publishing Ltd.
This work has been supported by DGICYT (project PB93-1256). G Panin thanks the Ministerio de Educacion y Ciencia for a research grant. Japan Energy Corporation is acknowledged for providing some of the samples.

Palabras clave:Deep Centers, Cathodoluminescence, Conversion Hg_(1-X)Cd_xTe
Materias:Ciencias > Física > Física de materiales
Código ID:26735
Depositado:30 Sep 2014 16:30
Última Modificación:09 Jun 2016 16:37

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