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P-to n-type Conversion in GaSb by ion-beam milling

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Panin, G. N. y Dutta, P. S. y Piqueras de Noriega, Javier y Dieguez, E. (1995) P-to n-type Conversion in GaSb by ion-beam milling. Applied Physics Letters, 67 (24). pp. 3584-3586. ISSN 0003-6951

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URL Oficial: http://dx.doi.org/10.1063/1.115325


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Resumen

Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence intensity is seen after ion beam treatment. The type conversion is proposed to occur due to a combined effect of generation of native donors and gettering of native accepters originally present in the as-grown samples.


Tipo de documento:Artículo
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(C) 1995 American Institute of Physics.
G. Panin thanks Ministerio de Educacion y Ciencia for a research grant and P. S. Dutta thanks CSIR (India) for the award of Senior Research Fellowship. This work was partially supported by the Instituto Nicolas Cabrera, UAM, Madrid, Spain, through a Visiting Scientist Fellowship and by the DGICYT (Project PB93-1256), CICYT (IN93-00129 and ESP95-0148.

Palabras clave:Implanted GaSb, Hg_(1-X)Cd_xTe
Materias:Ciencias > Física > Física de materiales
Código ID:26820
Depositado:01 Oct 2014 13:49
Última Modificación:01 Oct 2014 13:49

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