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Radiation effects on XFET voltage references

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Franco Peláez, Francisco Javier and Zong, YI and Agapito Serrano, Juan Andrés and Hernandez Cachero, Antonio (2005) Radiation effects on XFET voltage references. In Radiation Effects Data Workshop, 2005. IEEE. IEEE-Inst Electrical Electronics Engineers Inc, pp. 138-143. ISBN 0-7803-9367-8

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Official URL: http://dx.doi.org/10.1109/REDW.2005.1532680


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Abstract

XFET references make up a new kind of voltage references different from the popular band-gap or buried Zener devices. These references are built by means of a reference cell consisting of a couple of p-channel junction field effect transistors with different pinch-off voltage values and an operational amplifier for the purpose of improving the output characteristics of the whole device. An irradiation in a mixed gamma and neutron environment was performed at the Portuguese Research Reactor for a complete characterization of the devices. Some of the parameters were measured during the irradiation while the rest of them were obtained once the samples were removed from the neutron facility. Experimental results show that some references belonging to this class are interesting candidates for a design of radiation-tolerant electronic systems based on COTS devices.


Item Type:Book Section
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© IEEE

IEEE Radiation Effects Data Workshop (2005. Seattle, WA).

This work was supported by the collaboration agreement
K476/LHC between CERN and UCM, by the Spanish Research
Agency CICYT (FPA2002-00912) and partially supported by ITN.

Uncontrolled Keywords:JFET circuits; Gamma-ray effects; Neutron effects; Operational amplifiers; Reference circuits; COTS devices; XFET voltage references;gamma environment;neutron environment;operational amplifiers;p-channel junction field effect transistors;radiation effects;radiation-tolerant electronic systems;reference cells;FETs;Inductors;Instruments;Neutrons;Operational amplifiers;Output feedback;Photonic band gap;Radiation effects;Stability;Voltage
Subjects:Sciences > Physics > Electronics
Sciences > Physics > Radioactivity
ID Code:28904
Deposited On:11 Mar 2015 17:01
Last Modified:10 Dec 2018 14:58

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