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Inactivity windows in irradiated CMOS analog switches

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Franco Peláez, Francisco Javier and Zong, Yi and Agapito Serrano, Juan Andrés (2006) Inactivity windows in irradiated CMOS analog switches. IEEE transactions on nuclear science, 53 (4). pp. 1923-1930. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2006.880474



Abstract

Radiation tests have shown the existence of inactivity windows in analog switches. It means that the devices lose their ability to switch between ON and OFF states if the total radiation dose is placed between two characteristic values. Once the total radiation dose goes beyond the top value of the window, the switching ability reappears. A physical mechanism based on the evolution of the threshold voltage of irradiated NMOS transistors is proposed in this paper. Finally, consequences of inactivity windows in the conception of radiation tests are discussed.


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(c) 2006 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works

Uncontrolled Keywords:CMOS analogue integrated circuits; Field effect transistor switches; Radiation effects; Semiconductor device testing; CMOS analog switch; NMOS transistor irradiation; Inactivity windows; On-off state; Physical mechanism; Radiation testing; Total ionizing dose; Electron accelerators; Instruments; Ion accelerators; Ionizing radiation; Large Hadron Collider; Neutrons; Particle beams; Superconducting magnets;Switches; Testing; Analog switches; Complementary metal; Oxide semiconductor (CMOS) devices; Total ionizing dose (TID)
Subjects:Sciences > Physics > Electronics
Sciences > Physics > Radioactivity
ID Code:28929
Deposited On:03 Mar 2015 10:20
Last Modified:10 Dec 2018 14:58

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