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Electrical conductivity relaxation in thin-film yttria-stabilized zirconia

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Rivera Calzada, Alberto Carlos y Santamaría Sánchez-Barriga, Jacobo y León Yebra, Carlos (2001) Electrical conductivity relaxation in thin-film yttria-stabilized zirconia. Applied physics letters, 78 (5). pp. 610-612. ISSN 0003-6951

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URL Oficial: http://dx.doi.org/10.1063/1.1343852


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We report on complex admittance measurements on ZrO_(2):Y_(2)O_(3) (YSZ) thin films in the parallel plate geometry. Highly textured YSZ thin films, grown by rf sputtering, allow measuring complex admittance free of the effect of charge blocking at grain boundaries. We have examined low-temperature (close to room temperature) regime dominated by association of oxygen vacancies. Complex admittance analyzed in terms of the modulus formalism supplies information on correlation effects in ion motion and allows obtaining an association energy for the oxygen vacancies of 0.45 eV, in agreement with previous theoretical calculations.


Tipo de documento:Artículo
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© 2001 American Institute of Physics.

Palabras clave:Ionic-conductivity; Glasses; Crystals; Dynamics.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:31158
Depositado:01 Jul 2015 10:19
Última Modificación:07 Jul 2015 11:44

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