Universidad Complutense de Madrid
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Resistive switching in manganite/graphene hybrid planar nanostructures



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Rocci, Mirko y Tornos Castillo, Javier y Rivera Calzada, Alberto Carlos y Sefrioui, Zouhair y Clement, Marta y Iborra, Enrique y León Yebra, Carlos y Santamaría Sánchez-Barriga, Jacobo (2014) Resistive switching in manganite/graphene hybrid planar nanostructures. Applied physics letters, 104 (10). ISSN 0003-6951

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URL Oficial: http://dx.doi.org/10.1063/1.4868426

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We report on the fabrication and magnetotransport characterization of hybrid graphene-based nanodevices with epitaxial nanopatterned La_(0.7)Sr_(0.3)MnO_(3) manganite electrodes grown on SrTiO_(3)(100). The few-layer graphene was deposited onto the predefined manganite nanowires by using a mechanical transfer technique. These nanodevices exhibit resistive switching and hysteretic transport as measured by current-voltage curves. The resistance can be reversibly switched between high and low states, yielding a consistent non-volatile memory response. The effect is discussed in terms of changes in the concentration of oxygen vacancies at the space charge region of the Schottky barriers building at the contacts.

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© 2014 AIP Publishing LLC. We acknowledge financial support by Spanish MICINN through Grants MAT2011-27470-C02 and Consolider Ingenio 2010-CSD2009-00013 (Imagine), by CAM through grant S2009/MAT-1756 (Phama). We thank Patrizia De Marco, Francesco Perrozzi, and Luca Ottaviano for their help and guidance in preparing the graphene samples. We thank Susana Álvarez and Alicia de Andrés for help with preliminary Raman spectroscopy experiments

Palabras clave:Spin transport; Graphene; Single.
Materias:Ciencias > Física > Electricidad
Ciencias > Física > Electrónica
Código ID:31336
Depositado:27 Jul 2015 07:33
Última Modificación:10 Dic 2018 14:58

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