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Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs

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Franco Peláez, Francisco Javier and Clemente Barreira, Juan Antonio and Baylac, Maud and Rey, Solenne and Villa, Francesca and Mecha López, Hortensia and Agapito Serrano, Juan Andrés and Puchner, Helmut and Hubert, Guillaume and Velazco, Raoul (2017) Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs. IEEE Transactions on Nuclear Science, 64 (8). pp. 2152-2160. ISSN 0018-9499

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Abstract

This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments).


Item Type:Article
Uncontrolled Keywords:Multiple cell upsets, single bit upsets, single events, soft errors, SRAMs
Subjects:Sciences > Physics > Electronics
Sciences > Physics > Nuclear physics
Sciences > Physics > Computers
Sciences > Computer science > Integrated circuits
ID Code:43874
Deposited On:16 Aug 2017 08:05
Last Modified:10 Dec 2018 14:57

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