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Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs

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Franco Peláez, Francisco Javier y Clemente Barreira, Juan Antonio y Baylac, Maud y Rey, Solenne y Villa, Francesca y Mecha López, Hortensia y Agapito Serrano, Juan Andrés y Puchner, Helmut y Hubert, Guillaume y Velazco, Raoul (2017) Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs. IEEE Transactions on Nuclear Science, 64 (8). pp. 2152-2160. ISSN 0018-9499

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Resumen

This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments).


Tipo de documento:Artículo
Palabras clave:Multiple cell upsets, single bit upsets, single events, soft errors, SRAMs
Materias:Ciencias > Física > Electrónica
Ciencias > Física > Física nuclear
Ciencias > Física > Ordenadores
Ciencias > Informática > Circuitos integrados
Código ID:43874
Depositado:16 Aug 2017 08:05
Última Modificación:16 Aug 2017 08:11

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