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Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires

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Marcano, N. y Sangiao, S. y Plaza, M. y Pérez García, Lucas y Fernández Pacheco, A. y Córdoba, R. y Sánchez, M. C. y Morellón, L. y Ibarra, M. R. y De Teresa, J. M. (2010) Weak-antilocalization signatures in the magnetotransport properties of individual electrodeposited Bi Nanowires. Applied physics letters, 96 (8). ISSN 0003-6951

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URL Oficial: http://dx.doi.org/10.1063/1.3328101


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Resumen

We study the electrical resistivity of individual Bi nanowires of diameter 100 nm fabricated by electrodeposition using a four-probe method in the temperature range 5-300 K with magnetic fields up to 90 kOe. Low-resistance Ohmic contacts to individual Bi nanowires are achieved using a focused ion beam to deposit W-based nanocontacts. Magnetoresistance measurements show evidence for weak antilocalization at temperatures below 10 K, with a phase-breaking length of 100 nm.


Tipo de documento:Artículo
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© American Institute of Physics.
This work was supported by Spanish Ministry of Science (through Project Nos. MAT2007-65965-C02-02 and MAT2008-06567-C02) including FEDER funding and the Aragon Regional Government. N. Marcano and S. Sangiao acknowledge financial support from Spanish CSIC (JAE-doc program) and Spanish MEC (FPU program).

Palabras clave:Transport-properties; Bismuth nanowires; Localization; Arrays; Films; Metal
Materias:Ciencias > Física > Física de materiales
Ciencias > Física > Física del estado sólido
Código ID:45451
Depositado:21 Nov 2017 12:47
Última Modificación:11 Dic 2017 09:35

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