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Number of items: 38.

Piqueras de Noriega, Javier and Méndez Martín, Bianchi and Panin, G. N. and Dutta, P. S. and Dieguez, E. (1996) Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide. In CAS '96 Proceedings - 1996 International Semiconductor Conference. I E E E, pp. 497-506. ISBN 0-7803-3223-7

Cremades Rodríguez, Ana Isabel and Santos, M. T. and Remon, A. and García, J. A. and Dieguez, E. and Piqueras de Noriega, Javier (1996) Cathodoluminescence and photoluminescence in the core region of Bi_(12)GeO_(20) and Bi_(12)SiO_(20) crystals. Journal of applied physics, 79 (9). pp. 7186-7190. ISSN 0021-8979

Cremades Rodríguez, Ana Isabel and Santos, M. T. and Remon, A. and García, J. A. and Dieguez, E. and Piqueras de Noriega, Javier (1996) Cathodoluminescence and photoluminescence in the core region of Bi_12GeO_20 and Bi_12SiO_20 crystals. Journal of Applied Physics , 79 (9). pp. 7186-7190. ISSN 0021-8979

Pal, U and Fernández Sánchez, Paloma and Piqueras de Noriega, Javier and Sochinskii, N. V. and Dieguez, E. (1995) Cathodoluminescence characterization of Ge-doped CdTe crystals. Journal of Applied of Physics, 78 (3). pp. 1992-1995. ISSN 0021-8979

Chioncel, M.F. and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Vincent López, José Luis and Bermudez, V. and Dieguez, E. (2004) Cathodoluminescence characterization of InGaSb crystals. In 2004 24th International Conference on Microelectronics, Proceedings, Vols 1 and 2. Proceedings (International Conference on Microelectronics.) . IEEE. ISBN 0-7803-8166-1

Hidalgo Alcalde, Pedro and Plaza, J. L. and Méndez Martín, Bianchi and Dieguez, E. and Piqueras de Noriega, Javier (2002) Cathodoluminescence from Er_2O_3-doped n-type GaSb : Te crystals. Journal of Physics: Condensed Mater, 14 (48). pp. 13211-13215. ISSN 0953-8984

Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P. S. and Dieguez, E. (1996) Cathodoluminescence microscopy of doped GaSb crystals. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 42 (1-mar). pp. 38-42. ISSN 0921-5107

Pal, U and Piqueras de Noriega, Javier and Dutta, P. S. and Bhat, H. L. and Dubey, G. C. and Kumar, V. and Dieguez, E. (1996) Cathodoluminescence spectroscopy for evaluation of defect passivation in GaSb. In Diagnostic Techniques for Semiconductor Materials Processing. MRS Online Proceedings Library, II (406). Materials Research Soc, pp. 537-542. ISBN 1-55899-309-6

Méndez Martín, Bianchi and Dutta, P. S. and Piqueras de Noriega, Javier and Dieguez, E. (1995) Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide. Applied Physics letter, 67 (18). pp. 2648-2650. ISSN 0003-6951

Hidalgo Alcalde, Pedro and Piqueras de Noriega, Javier and Sochinskii, N. V. and Abellá, M. and Saucedo, E. and Dieguez, E. (2008) Cathodoluminescence study of CdTe crystals doped with Bi and Bi : Yb. Journal of Materials Science, 43 (16). pp. 5305-5308. ISSN 0022-2461

Panin, G. and Piqueras de Noriega, Javier and Sochinskii, N. V. and Dieguez, E. (1996) Cathodoluminescence study of the effect of annealing in HgI_2 vapor on the defect structure of CdTe. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 42 (1-mar). pp. 277-283. ISSN 0921-5107

Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Ruiz, C. and Bermudez, V. and Piqueras de Noriega, Javier and Dieguez, E. (2005) Cathodoluminescence study of ytterbium doped GaSb. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 121 (1-feb). pp. 108-111. ISSN 0921-5107

Vincent, J. and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Amariei, A. and Polychronladis, E.K. and Dieguez, E. (2006) Characterization of undoped and Te-doped GaSb crystals grown by the vertical feeding method. Journal of Crystal Growth, 289 (1). pp. 18-23. ISSN 0022-0248

Plaza, J. L: and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dieguez, E. (2002) Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique. Journal of Crystal Growth , 241 (3). pp. 283-288. ISSN 0022-0248

Plaza, J. L. and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Castaño, J. L. and Dieguez, E. (1999) Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique. Journal of crystal growthJ, 198 (pt. 1). pp. 379-383. ISSN 0022-0248

Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P: S. and Dieguez, E. (1999) Effect of In doping in GaSb crystals studied by cathodoluminescence. Semiconductor Science and Technology, 14 (10). pp. 901-904. ISSN 0268-1242

Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Plaza, J. and Dieguez, E. (1998) Effect of erbium doping on the defect structure of GaSb crystals. Semiconductor Science and Technology, 13 (12). pp. 1431-1433. ISSN 0268-1242

Panin, G. N. and Piqueras de Noriega, Javier and Sochinskii, N. and Dieguez, E. (1997) Effect of α-Hgl_2 epitaxial growth on the defect structure of CdTe:Ge substrates. Applied Physics Letters, 70 (7). pp. 877-879. ISSN 0003-6951

Sochinskii, N. V. and Dieguez, E. and Pal, U. and Piqueras de Noriega, Javier and Fernández Sánchez, Paloma and Agullorueda, F. (1995) Elimination of Te precipitates from CdTe wafers. Semiconductor Science and Technology, 10 (6). pp. 870-875. ISSN 0268-1242

Plaza, J. L. and Hidalgo Alcalde, Pedro and Piqueras de Noriega, Javier and Dieguez, E. (2000) Estudio de la incorporación de iones de Er y Nd en galio antimonio crecido por el método Bridgman. Boletín de la Sociedad Española de Cerámica y Vidrio, 39 (4). pp. 463-467. ISSN 0366-3175

Sochinskii, N. V. and Saucedo, E. and Abellan, M. and Rodríguez Fernández, José and Hidalgo Alcalde, Pedro and Piqueras de Noriega, Javier and Ruiz, C.M. and Bermudez, V. and Dieguez, E. (2008) Growth and characterization of CdTe:Ge:Yb. Journal of Crystal growth, 310 (7-sep). pp. 2076-2079. ISSN 0022-0248

Carcelen, V. and Hidalgo Alcalde, Pedro and Rodríguez Fernández, J. and Dieguez, E. (2010) Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses. Journal of Applied Physics, 107 (9). ISSN 0021-8979

Carcelen, V. and Hidalgo Alcalde, Pedro and Rodríguez Fernández, J. and Dieguez, E. (2010) Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses. Journal of applied physics, 107 (9). ISSN 0021-8979

Díaz-Guerra Viejo, Carlos and Vicent López, José Luis and Piqueras de Noriega, Javier and Dieguez, E. (2007) Influence of doping level on the cathodoluminescence of Se-doped GaSb crystals. Journal of Physics D-Applied Physics, 40 (1). pp. 137-143. ISSN 0022-3727

Carcelen, V. and Vijayan, N. and Rodríguez Fernández, J. and Hidalgo Alcalde, Pedro and Piqueras de Noriega, Javier and Sochinskii, N. V. and Pérez, J. M. and Dieguez, E. (2009) Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals. Journal of Crystal Growth, 311 (5). pp. 1264-1267. ISSN 0022-0248

Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Dutta, P: S. and Piqueras de Noriega, Javier and Dieguez, E. (1998) Luminescence properties of transition-metal-doped GaSb. Physical Review B, 57 (11). pp. 6479-6484. ISSN 0163-1829

Cremades Rodríguez, Ana Isabel and Piqueras de Noriega, Javier and Remón, A. and García, J. A. and Santos, M. T. and Dieguez, E. (1998) Luminescence study of thermal treated and laser irradiated Bi_12GeO_20 and Bi_12SiO_20 crystals. Journal of Applied Physics , 83 (12). pp. 7948-7952. ISSN 0021-8979

Dutta, P. S. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dieguez, E. and Bhat, H. L. (1996) Nature of compensating luminescence centers in Te-diffused and -doped GaSb. Journal of Applied Physics, 80 (2). pp. 1112-1115. ISSN 0021-8979

Panin, G. N. and Dutta, P. S. and Piqueras de Noriega, Javier and Dieguez, E. (1995) P-to n-type Conversion in GaSb by ion-beam milling. Applied Physics Letters, 67 (24). pp. 3584-3586. ISSN 0003-6951

Dutta, P. S. and Sreedhar, A. K. and Bhat, H. L. and Dubey, G. C. and Kumar, V. and Dieguez, E. and Pal, U. and Piqueras de Noriega, Javier (1996) Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment. Journal of Applied Physics, 79 (6). pp. 3246-3252. ISSN 0021-8979

Plaza, J. L. and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dieguez, E. (2000) Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 71 . pp. 282-287. ISSN 0921-5107

Rodríguez Fernández, J. and Carcelen, V. and Hidalgo Alcalde, Pedro and Vijayan, N. and Piqueras de Noriega, Javier and Sochinskii, N. V. and Pérez, J. M. and Dieguez, E. (2009) Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals. Journal of Applied of Physics, 106 (4). ISSN 0021-8979

Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dutta, P: S. and Dieguez, E. (1999) Scanning tunneling spectroscopy of transition-metal-doped GaSb. Physical review B, 60 (15). pp. 1613-1615. ISSN 0163-1829

Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Plaza, J. L. and Dieguez, E. (1999) Scanning tunneling spectroscopy study of erbium doped GaSb crystals. Journal of Applied Physics, 86 (3). pp. 1449-1451. ISSN 0021-8979

Vicent López, José Luis and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Dieguez, E. (2006) Solidification features of cast and vertically fed Te-doped GaSb materials. Journal of Crystal Growth, 293 (2). pp. 285-290. ISSN 0022-0248

Plaza, J. L. and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Dieguez, E. (2002) Study of the defect structure, compositional and electrical properties of Er_2O_3-doped n-type GaSb : Te crystals grown by the vertical Bridgman technique. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 91-92 . pp. 529-533. ISSN 0921-5107

Crocco, J. and Bensalah, H. and Zheng, Q. and Dierre, F. and Hidalgo Alcalde, Pedro and Carrascal, J. and Vela, O. and Piqueras de Noriega, Javier and Dieguez, E. (2011) Study of the effects of edge morphology on detector performance by leakage current and cathodoluminescence. IEEE Transactions on Nuclear Science, 58 (4). pp. 1935-1941. ISSN 0018-9499

Vincent López, José Luis and Díaz-Guerra Viejo, Carlos and Piqueras de Noriega, Javier and Dieguez, E. (2007) Technical developments and principal results of vertical feeding method for GaSb and GaInSb alloys. In Thermophotovoltaic Generation of Electricity. Aip Conference Proceedings (890). Amer Inst Physics. ISBN 978-0-7354-0392-5

This list was generated on Mon May 27 07:54:14 2019 CEST.