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Número de eprints: 9.

Piqueras de Noriega, Javier y Méndez Martín, Bianchi y Panin, G. N. y Dutta, P. S. y Dieguez, E. (1996) Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide. In CAS '96 Proceedings - 1996 International Semiconductor Conference. I E E E, pp. 497-506. ISBN 0-7803-3223-7

Méndez Martín, Bianchi y Piqueras de Noriega, Javier y Dutta, P. S. y Dieguez, E. (1996) Cathodoluminescence microscopy of doped GaSb crystals. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 42 (1-mar). pp. 38-42. ISSN 0921-5107

Pal, U y Piqueras de Noriega, Javier y Dutta, P. S. y Bhat, H. L. y Dubey, G. C. y Kumar, V. y Dieguez, E. (1996) Cathodoluminescence spectroscopy for evaluation of defect passivation in GaSb. In Diagnostic Techniques for Semiconductor Materials Processing. MRS Online Proceedings Library, II (406). Materials Research Soc, pp. 537-542. ISBN 1-55899-309-6

Méndez Martín, Bianchi y Dutta, P. S. y Piqueras de Noriega, Javier y Dieguez, E. (1995) Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide. Applied Physics letter, 67 (18). pp. 2648-2650. ISSN 0003-6951

Hidalgo Alcalde, Pedro y Méndez Martín, Bianchi y Piqueras de Noriega, Javier y Dutta, P. S. (1998) Impurity segregation in Al doped GaSb studied by cathodoluminescence microscopy. In Defect and Impurity Engineered semiconductors II. MRS Online Proceedings Library (510). Materials Research Society, pp. 639-644. ISBN 1-55899-416-5

Hidalgo Alcalde, Pedro y Méndez Martín, Bianchi y Piqueras de Noriega, Javier y Dutta, P. S. y Diéguez, E. (1997) Influence of doping on the native acceptors of gallium antimonide. In Microscopy of Semiconducting Materials 1997. Conference Series- Institute of Physics (157). IOP Publishing LTD, pp. 527-530. ISBN 0-7503-0464-2

Dutta, P. S. y Méndez Martín, Bianchi y Piqueras de Noriega, Javier y Dieguez, E. y Bhat, H. L. (1996) Nature of compensating luminescence centers in Te-diffused and -doped GaSb. Journal of Applied Physics, 80 (2). pp. 1112-1115. ISSN 0021-8979

Panin, G. N. y Dutta, P. S. y Piqueras de Noriega, Javier y Dieguez, E. (1995) P-to n-type Conversion in GaSb by ion-beam milling. Applied Physics Letters, 67 (24). pp. 3584-3586. ISSN 0003-6951

Dutta, P. S. y Sreedhar, A. K. y Bhat, H. L. y Dubey, G. C. y Kumar, V. y Dieguez, E. y Pal, U. y Piqueras de Noriega, Javier (1996) Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment. Journal of Applied Physics, 79 (6). pp. 3246-3252. ISSN 0021-8979

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