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Number of items: 20.

Pérez, E. and Dueñas, S. and Castán, H. and García, H. and Bailón, L. and Montero, D. and García Hernansanz, Rodrigo and García Hemme, Eric and Olea, J. and González Díaz, Germán (2015) A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications. Journal of applied physics, 118 (24). ISSN 0021-8979

García Hemme, Eric (2011) Caracterización optoelectrónica de láminas de silicio implantadas con titanio (Optoelectronic characterization of titanium implanted silicon thin films). [Trabajo Fin de Máster]

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Double ion implantation and pulsed laser melting processes for third generation solar cells. International Journal of Photoenergy, 2013 . ISSN 1110-662x

García Hemme, Eric and Yu, K. M. and Wahnon, P. and González Díaz, Germán and Walukiewicz, W. (2015) Effects of the d-donor level of vanadium on the properties of Zn_(1-x)V_(x)O films. Applied physics letters, 106 (18). ISSN 0003-6951

Castán, Helena and Pérez, Eduardo and Dueñas, Salvador and Bailón, Luis and Olea Ariza, Javier and Pastor Pastor, David and García Hemme, Eric and Irigoyen Irigoyen, Maite and González Díaz, Germán (2012) Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantation. In ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. AIP Conference proceedingsro . American Institute of Physics (AIP), pp. 189-192. ISBN 978-0-7354-1109-8

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Electrical decoupling effect on intermediate band Ti-implanted silicon layers. Journal of Physics D-Applied Physics, 46 (13). ISSN 0022-3727

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material. In Proceedings of the 2013 Spanich Conference on Electron Devices (CDE 2013). Spanish Conference on Electron Devices . IEEE, pp. 377-380. ISBN 978-1-4673-4666-5

Pérez, E. and Castán, H. and García, H. and Dueñas, S. and Bailón, L. and Montero Álvarez, Daniel and García-Hernansanz, R. and García Hemme, Eric and Olea Ariza, Javier and González Díaz, Germán (2015) Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications. Applied physics letters, 106 (2). ISSN 0003-6951

González Díaz, Germán and García Hemme, Eric and Olea Ariza, Javier and Pastor Pastor, David and Bailón, L. and Castán, H. and Dueñas, S. and García, H. and Pérez, E. (2013) Experimental verification of intermediate band formation on titanium-implanted silicon. Journal of Applied Physics, 113 (2). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon. Applied physics Letters, 103 (3). ISSN 0003-6951

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells. In Proceedings of the 2013 Spanisch Conference on Electron Devices. IEEE, pp. 337-340. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Material. In Ion Implantation Technology. American Institute of Physics, pp. 54-57.

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Low temperature intermediate band metallic behavior in Ti implanted Si. Thin Solid Films, 520 (21). pp. 6614-6618. ISSN 0040-6090

García Hemme, Eric and García Hernansanz, Rodrigo and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Álvaro del and Mártil de la Plaza, Ignacio and González Díaz, Germán (2015) Meyer Neldel rule application to silicon supersaturated with transition metals. Journal of physics D: applied physics, 48 (7). ISSN 0022-3727

García Hemme, Eric (2015) Respuesta infrarroja en silicio mediante implantación iónica de metales en transición. [Thesis]

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Álvaro del (2014) Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector. Applied physics letters, 104 (21). ISSN 0003-6951

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si. Journal of Applied Physics, 114 (5). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Sub-bandgap spectral photo-response analysis of Ti supersaturated Si. Applied physics Letters, 101 (19). ISSN 0003-6951

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) The intermediate band approach in the third solar cell generation context. In Proceedings of the 2013 Spanish Conference on Electron Devices. IEEE, pp. 297-300. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and García Hemme, Eric and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2011) UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation. Semiconductor Science and Technology, 26 (11). ISSN 0268-1242

This list was generated on Sat Oct 1 03:51:12 2016 CEST.