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Number of items: 125.

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide. Journal of Materials Science: Materials in Electronics, 14 (5-7). pp. 375-378. ISSN 0957-4522

Mártil de la Plaza, Ignacio and González Díaz, Germán and San Andres Serrano, Enrique (2005) A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition. Semiconductor Science and Technology, 20 (10). pp. 1044-1051. ISSN 0268-1242

Pérez, E. and Dueñas, S. and Castán, H. and García, H. and Bailón, L. and Montero, D. and García Hernansanz, Rodrigo and García Hemme, Eric and Olea, J. and González Díaz, Germán (2015) A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications. Journal of applied physics, 118 (24). ISSN 0021-8979

González Díaz, Germán and Pastor, D. and García Hemme, Eric and Montero, D. and García Hernansanz, Rodrigo and Olea, J. and Prado Millán, Álvaro del and San Andres Serrano, Enrique and Mártil de la Plaza, Ignacio (2017) A robust method to determine the contact resistance using the van der Pauw set up. Measurement, 98 . pp. 151-158. ISSN 0263-2241

Prado Millán, Álvaro del and San Andres Serrano, Enrique and Mártil de la Plaza, Ignacio and González Díaz, Germán and Kliefoth, K. and Füssel, W. (2004) Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices. Semiconductor Science and Technology, 19 (2). pp. 133-141. ISSN 0268-1242

Franco Peláez, Francisco Javier and González Díaz, Germán and Mártil de la Plaza, Ignacio (2015) Apuntes de Electrónica Analógica. [Teaching Resource] (Submitted)

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method. Journal of Applied Physics, 94 (12). pp. 7462-7469. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2004) Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method. Thin Solid Films, 459 (1-2). pp. 203-207. ISSN 0040-6090

Mártil de la Plaza, Ignacio and González Díaz, Germán (2001) C-V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N-2 remote plasma cleaning of the InP surface. Journal of Materials Science: Materials in Electronics, 12 (4-6). pp. 263-267. ISSN 0957-4522

Mártil de la Plaza, Ignacio and González Díaz, Germán and Hernández Rojas, J. L. and Lucía Mulas, María Luisa and Sánchez Quesada, Francisco and Santamaría Sánchez-Barriga, Jacobo (1992) Chalcopyrite CuGaxIn(1-x)Se2 semiconducting thin films produced by radio frequency sputtering. Applied physics Letters, 60 (15). pp. 1875-1877. ISSN 0003-6951

Mártil de la Plaza, Ignacio and González Díaz, Germán (2000) Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique. Semiconductor Science and Technology, 15 (8). pp. 823-828. ISSN 0268-1242

González Díaz, Germán and Artús, L. and Blanco, N. and Cuscó, R. and Ibáñez, J. and Long, A.R. and Rahman, M. (2000) Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors. Journal of Applied Physics, 88 (11). pp. 6567-6570. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2002) Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance. Vacuum, 67 (3-4). pp. 507-512. ISSN 0042-207X

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2002) Compositional analysis of SiOxNy : H films by heavy-ion ERDA: the problem of radiation damage. Surface and interface analysis, 34 (1). pp. 749-753. ISSN 0142-2421

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2000) Compositional analysis of amorphous SiNx : H films by ERDA and infrared spectroscopy. Surface and interface analysis, 30 (1). pp. 534-537. ISSN 0142-2421

Mártil de la Plaza, Ignacio and González Díaz, Germán and San Andres Serrano, Enrique (2006) Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis. Thin Solid Films, 515 (2). pp. 695-699. ISSN 0040-6090

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2004) Compositional analysis of thin SiOxNy : H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 217 (2). pp. 237-245. ISSN 0168-583X

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2004) Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates. Japanese Journal of Applied Physics Part-1: Regular Papers Short Notes & Review Papers, 43 (1). pp. 66-70. ISSN 0021-4922

Mártil de la Plaza, Ignacio and González Díaz, Germán and Dueñas, S. and Peláez, R. and Castán, E. and Barbolla, J. (1998) Conductance transients study of slow traps in Al/SiNx : H/Si and Al/SiNx : H/InP metal-insulator-semiconductor structures. In Electrically based microstructural characterization II. Materials Research Society Symposium Proceedings, 500 . Materials Research Society, Pennsylvania, USA, pp. 87-92. ISBN 1-55899-405-X

Mártil de la Plaza, Ignacio and González Díaz, Germán (2002) Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures. In Electrically Based Microstructural Characterization. Materials Research Society, pp. 231-236. ISBN 1-55899-635-4

González Díaz, Germán and Hernández Vélez, M. and Jensen, J. and Martínez, O. and Sanz, R. and Vázquez, M. (2009) Continuous and Localized Mn Implantation of ZnO. Nanoscale research letters, 4 (8). pp. 878-887. ISSN 1931-7573

Mártil de la Plaza, Ignacio and González Díaz, Germán and Sánchez Quesada, Francisco and Santamaría Sánchez-Barriga, Jacobo and Iborra, E. (1987) CuInSe2 thin films produced by rf sputtering in Ar/H2 atmospheres. Journal of Applied Physics, 62 (10). pp. 4163-4169. ISSN 0021-8979

González Díaz, Germán and Martín, J.M. and Barbolla, J. and Castán, E. and Dueñas, S. and Pinacho, R. and Quintanilla, L. (1997) Deep levels in p(+)-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP. Journal of Applied Physics, 81 (7). pp. 3143-3150. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Martín Pacheco, Jaime Miguel and Castán, E. and Dueñas, S. (1995) Deep-level transient spectroscopy and electrical characterization of ion-implanted p-n junctions into undoped InP. Journal of applied physics, 78 (9). pp. 5325-5330. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Martín, J.M. (1998) Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size. Thin Solid Films, 315 (01-02). pp. 22-28. ISSN 0040-6090

García Hernansanz, Rodrigo and García Hemme, Eric and Montero Álvarez, Daniel and Prado Millán, Álvaro del and Olea Ariza, Javier and San Andres Serrano, Enrique and Mártil de la Plaza, Ignacio and González Díaz, Germán (2016) Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells. IEEE journal of photovoltaics, 6 (5). ISSN 2156-3381

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Castán, E. and Dueñas, S. and Fernández, M. (1998) Deposition of SiNx : H thin films by the electron cyclotron resonance and its application to Al/SiNx : H/Si structures. Journal of Applied Physics, 83 (1). pp. 332-338. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Martín, J.M. and Fernández, M. (1998) Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method. Thin Solid Films, 317 (01-02). pp. 116-119. ISSN 0040-6090

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2011) Depth profile study of Ti implanted Si at very high doses. Journal of Applied Physics, 110 (6). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Double ion implantation and pulsed laser melting processes for third generation solar cells. International Journal of Photoenergy, 2013 . ISSN 1110-662x

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2010) Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks. Journal of Applied Physics, 107 (11). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2009) Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks. In Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, pp. 1-4. ISBN 978-1-4244-2838-0

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (1999) Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance. Journal of vacuum science & technology a: Vacuum surfaces and films, 17 (4 - 1ª). pp. 1263-1268. ISSN 0734-2101

García Hemme, Eric and Yu, K. M. and Wahnon, P. and González Díaz, Germán and Walukiewicz, W. (2015) Effects of the d-donor level of vanadium on the properties of Zn_(1-x)V_(x)O films. Applied physics letters, 106 (18). ISSN 0003-6951

Castán, Helena and Pérez, Eduardo and Dueñas, Salvador and Bailón, Luis and Olea Ariza, Javier and Pastor Pastor, David and García Hemme, Eric and Irigoyen Irigoyen, Maite and González Díaz, Germán (2012) Electrical Properties of Intermediate Band (IB) Silicon Solar Cells Obtained by Titanium Ion Implantation. In ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology. AIP Conference proceedingsro . American Institute of Physics (AIP), pp. 189-192. ISBN 978-0-7354-1109-8

Mártil de la Plaza, Ignacio and González Díaz, Germán (2001) Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques. Japanese Journal of Applied Physics, Part. 1: Regular Papers Short Notes & Review Papers, 40 (7). pp. 4479-4484. ISSN 0021-4922

Mártil de la Plaza, Ignacio and González Díaz, Germán (1999) Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication. Journal of Materials Science: Materials in Electronics, 10 (5-6). pp. 373-377. ISSN 0957-4522

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films. Journal of Materials Science: Materials in Electronics, 14 (5-7). pp. 287-290. ISSN 0957-4522

Mártil de la Plaza, Ignacio and González Díaz, Germán (1999) Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx : H/InP metal-insulator-semiconductor structures fabrication. Journal of Applied Physics, 86 (13). pp. 6924-6930. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán (2000) Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx:H/InP metal-insulator-semiconductor structures. Japanese Journal of Applied Physics Part-1: Regular Papers Short Notes & Review Papers, 39 (11). pp. 6212-6215. ISSN 0021-4922

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Electrical decoupling effect on intermediate band Ti-implanted silicon layers. Journal of Physics D-Applied Physics, 46 (13). ISSN 0022-3727

Mártil de la Plaza, Ignacio and González Díaz, Germán (2007) Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics. Semiconductor Science and Technology, 22 (12). pp. 1344-1351. ISSN 0268-1242

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2001) Electrical properties of rapid thermally annealed SiNx : H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy. Semiconductor Science and Technology, 16 (7). pp. 534-542. ISSN 0268-1242

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material. In Proceedings of the 2013 Spanich Conference on Electron Devices (CDE 2013). Spanish Conference on Electron Devices . IEEE, pp. 377-380. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Electronic transport properties of Ti-impurity band in Si. Journal of Physics D-Applied Physics, 42 (8). ISSN 0022-3727

Pérez, E. and Castán, H. and García, H. and Dueñas, S. and Bailón, L. and Montero Álvarez, Daniel and García-Hernansanz, R. and García Hemme, Eric and Olea Ariza, Javier and González Díaz, Germán (2015) Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications. Applied physics letters, 106 (2). ISSN 0003-6951

Mártil de la Plaza, Ignacio and González Díaz, Germán (2003) Evidence of phosphorus incorporation into InGaAs/InP epilayersafter thermal annealing. Journal of Applied Physics, 93 (11). pp. 9019-9023. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Barbolla, J. and Castán, E. and Dueñas, S. and Peláez, R. and Pinacho, R. and Quintanilla, L. (1997) Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures. Applied physics Letters, 71 (6). pp. 826-828. ISSN 0003-6951

González Díaz, Germán and García Hemme, Eric and Olea Ariza, Javier and Pastor Pastor, David and Bailón, L. and Castán, H. and Dueñas, S. and García, H. and Pérez, E. (2013) Experimental verification of intermediate band formation on titanium-implanted silicon. Journal of Applied Physics, 113 (2). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Martín, J.M. and García, S. (1998) Experimental verification of the physics and structure of the Bipolar Junction Transistor. IEEE Transactions on Education, 41 (3). pp. 224-228. ISSN 0018-9359

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon. Applied physics Letters, 103 (3). ISSN 0003-6951

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (1999) Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature. Thin Solid Films, 343 (17SI). pp. 437-440. ISSN 0040-6090

Mártil de la Plaza, Ignacio and González Díaz, Germán (1999) Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing. Semiconductor Science and Technology, 14 (7). pp. 628-631. ISSN 0268-1242

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Castán, E. and Dueñas, S. and Fernández, M. (1998) Good quality Al/SiNx : H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method. Journal of Applied Physics, 83 (1). pp. 600-603. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and San Andres Serrano, Enrique (2009) High Quality Ti-Implanted Si Layers Above Solid Solubility Limit. In Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, pp. 38-41. ISBN 978-1-4244-2838-0

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and San Andres Serrano, Enrique (2010) High quality Ti-implanted Si layers above the Mott limit. Journal of Applied Physics, 107 (10). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Lucía Mulas, María Luisa and San Andres Serrano, Enrique (2007) High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties. Journal of Applied Physics, 102 (4). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán (2000) High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices. Journal of Applied Physics, 87 (7). pp. 3478-3482. ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells. In Proceedings of the 2013 Spanisch Conference on Electron Devices. IEEE, pp. 337-340. ISBN 978-1-4673-4666-5

Redondo, E. and Mártil de la Plaza, Ignacio and González Díaz, Germán and Fernández Sánchez, Paloma and Cimas Cuevas, María Rosa (2002) Improvement of SiNx : H/InP gate structures for the fabrication of metal-insulator-semiconductor field-effect transistors. Semiconductor Science and Technology, 17 (7). pp. 672-676. ISSN 0268-1242

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2004) Influence of H on the composition and atomic concentrations of "N-rich" plasma deposited SiOxNyHz films. Journal of Applied Physics, 95 (10). pp. 5373-5382. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán (2001) Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx : H/InP structures. Journal of Vacuum Science & Technology B, 19 (1). pp. 186-191. ISSN 1071-1023

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2008) Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon. Journal of Applied Physics, 104 (9). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Martínez, F.L. and Selle, B. and Sieber, I. (1998) Influence of rapid thermal annealing processes on the properties of SiNx : H films deposited by the electron cyclotron resonance method. Journal of Non-Crystalline Solids, 227 (A). pp. 523-527. ISSN 0022-3093

García Hemme, Eric and Montero Álvarez, Daniel and García Hernansanz, Rodrigo and Olea Ariza, Javier and Mártil de la Plaza, Ignacio and González Díaz, Germán (2016) Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures. Journal of physics D: applied physics, 49 (27). ISSN 0022-3727

Mártil de la Plaza, Ignacio and González Díaz, Germán and San Andres Serrano, Enrique (2005) Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon. In 2005 Spanish Conference on Electron Devices, Proceedings. IEEE, pp. 49-52. ISBN 0-7803-8810-0

Mártil de la Plaza, Ignacio and González Díaz, Germán (2000) Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTS and conductance transient techniques. Microelectronics reliability, 40 (4-5). pp. 845-848. ISSN 0026-2714

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2003) Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiOxNyHz films. Japanese Journal of Applied Physics, 42 (8). pp. 4978-4981. ISSN 0021-4922

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Intermediate band mobility in heavily titanium-doped silicon layers. Solar Energy Materials and Solar Cells, 93 (9). pp. 1668-1673. ISSN 0927-0248

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2012) Interstitial Ti for intermediate band formation in Ti-supersaturated silicon. Journal of Applied Physics, 112 (11). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Material. In Ion Implantation Technology. American Institute of Physics, pp. 54-57.

Mártil de la Plaza, Ignacio and González Díaz, Germán (2007) Isotopic study of the nitrogen-related modes in N+-implanted ZnO. Applied physics Letters, 90 (18). ISSN 0003-6951

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Laser thermal annealing effects on single crystal gallium phosphide. Journal of Applied Physics, 106 (5). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material. Applied physics Letters, 94 (4). ISSN 0003-6951

García Hernansanz, Rodrigo and García Hemme, Eric and Montero Álvarez, Daniel and Olea Ariza, Javier and San Andres Serrano, Enrique and Prado Millán, Álvaro del and Ferrer, F. J. and Mártil de la Plaza, Ignacio and González Díaz, Germán (2016) Limitations of high pressure sputtering for amorphous silicon deposition. Materials research express, 3 (3). ISSN 2053-1591

Mártil de la Plaza, Ignacio and González Díaz, Germán and Redondo, E. and Blanco, N. (1999) Low interface trap density in rapid thermally annealed Al/SiNx : H/InP metal-insulator-semiconductor devices. Applied physics Letters, 74 (7). pp. 991-993. ISSN 0003-6951

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Low temperature intermediate band metallic behavior in Ti implanted Si. Thin Solid Films, 520 (21). pp. 6614-6618. ISSN 0040-6090

San Andrés Serrano, Enrique and González Díaz, Germán and Mártil de la Plaza, Ignacio and del Prado Millán, Álvaro and García Hemme, Eric and Pastor Pastor, David and Olea Ariza, Javier and Lucía Mulas, María Luisa and Franco Peláez, Francisco Javier and Sánchez Balmaseda, Margarita (2018) Mejora de las Metodologías Docentes para el área de la Electrónica. [Proyecto de Innovación Docente]

García Hemme, Eric and García Hernansanz, Rodrigo and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Álvaro del and Mártil de la Plaza, Ignacio and González Díaz, Germán (2015) Meyer Neldel rule application to silicon supersaturated with transition metals. Journal of physics D: applied physics, 48 (7). ISSN 0022-3727

Mártil de la Plaza, Ignacio and González Díaz, Germán (2002) Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments. International Journal of Modern Physics B, 16 (28-29). pp. 4401-4404. ISSN 0217-9792

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films. Journal of Applied Physics, 94 (2). pp. 1019-1029. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2001) Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealing. Physical review B, 63 (24). ISSN 0163-1829

Mártil de la Plaza, Ignacio and González Díaz, Germán (2000) N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance. Microelectronics reliability, 40 (4-5). pp. 837-840. ISSN 0026-2714

Mártil de la Plaza, Ignacio and González Díaz, Germán and San Andres Serrano, Enrique (2005) On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD. Microelectronics reliability, 45 (5-6). pp. 978-981. ISSN 0026-2714

Mártil de la Plaza, Ignacio and González Díaz, Germán (1999) Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing. Thin Solid Films, 343 (17SI). pp. 433-436. ISSN 0040-6090

Mártil de la Plaza, Ignacio and González Díaz, Germán and Hernández Rojas, J.L. and Lucía Mulas, María Luisa and Sánchez Quesada, Francisco and Santamaría Sánchez-Barriga, Jacobo (1992) Optical analysis of absorbing thin films: application to ternary chalcopyrite semiconductors. Applied Optics, 31 (10). pp. 1606-1611. ISSN 0003-6935

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition. Journal of Applied Physics, 93 (11). pp. 8930-8938. ISSN 0021-8979

González Díaz, Germán and Bernabeu Martínez, Eusebio and Hernández Rojas, J. L. and Escudero, J. L. and Guerrero, H. (1993) Optical properties of polycrystalline Cd(1-x)Mn(x)Te. Journal of Applied Physics, 74 (5). pp. 3459-3463. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2007) Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2. Applied physics Letters, 91 (19). ISSN 0003-6951

Mártil de la Plaza, Ignacio and González Díaz, Germán and Hernández Rojas, J. L. and Lucía Mulas, María Luisa and Sánchez Quesada, Francisco and Santamaría Sánchez-Barriga, Jacobo (1992) Optical spectroscopic study of the growth dynamics of radio-frequency-sputtered YBa2Cu3O(7-x) thin films. Applied physics Letters, 61 (2). pp. 231-233. ISSN 0003-6951

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2005) Oxygen to silicon ratio determination of SiOXHY thin films. Thin Solid Films, 492 (1-2). pp. 232-235. ISSN 0040-6090

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2005) Physical properties of high pressure reactively sputtered TiO2. Journal of Vaccum Scuebce & Technology A, 23 (6). pp. 1523-1530. ISSN 0734-2101

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2008) Physical properties of high pressure reactively sputtered hafnium oxide. Vacuum, 82 (12). pp. 1391-1394. ISSN 0042-207X

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2002) Physical properties of plasma deposited SiOx thin films. Vacuum, 67 (3-4). pp. 525-529. ISSN 0042-207X

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2004) Procesos de oxidación de Si mediante plasma de resonancia ciclotrónica de electrones. Boletín de la Sociedad Española de Cerámica y Vidrio, 43 (2). pp. 379-382. ISSN 0366-3175

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Pulsed Laser Melting Effects on Single Crystal Gallium Phosphide. In Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, pp. 42-45. ISBN 978-1-4244-2838-0

González Díaz, Germán and Blanco, N. and Artús, L. and Cuscó, R. and Ibáñez, J. (1999) Raman scattering by LO phonon-plasmon coupled modes in n-type InP. Physical Review B, 60 (8). pp. 5456-5463. ISSN 0163-1829

Mártil de la Plaza, Ignacio and González Díaz, Germán (2007) Raman scattering characterization of implanted ZnO. In Zinc Oxide and Related Materials. MRS Proceedings, 957 . Materials Research Society, pp. 235-240. ISBN 978-1-55899-914-5

González Díaz, Germán and Martín, J.M. and Artús, L. and Cuscó, R. and Ibañez, J. (1997) Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP. Journal of Applied Physics, 82 (8). pp. 3736-3739. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2002) Rapid thermal annealing effects on plasma deposited SiOx : H films. Vacuum, 67 (3-4). pp. 531-536. ISSN 0042-207X

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators. Journal of Vacuum Science & Technology B, 21 (4). pp. 1306-1313. ISSN 1071-1023

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Rapid thermally annealed plasma deposited SiNx : H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP. Journal of Applied Physics, 94 (4). pp. 2642-2653. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Sánchez Quesada, Francisco and Santamaría Sánchez-Barriga, Jacobo and Iborra, E. (1989) Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions. Journal of Applied Physics, 65 (8). pp. 3236-3241. ISSN 0021-8979

Olea Ariza, Javier and López, E. and Antolín, E. and Martí, A. and Luque, A. and García Hemme, Eric and Pastor, D. and García Hernansanz, Rodrigo and Prado Millán, Álvaro del and González Díaz, Germán (2016) Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap. Journal of physics D: applied physics, 49 (5). ISSN 0022-3727

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Álvaro del (2014) Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector. Applied physics letters, 104 (21). ISSN 0003-6951

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si. Journal of Applied Physics, 114 (5). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Hernández Rojas, J.L. and Lucía Mulas, María Luisa and Santamaría Sánchez-Barriga, Jacobo and Sánchez Quesada, Francisco (1994) Stoichlometry control over a wide composition range of sputtered CuGa_(x)In_(1-x)Se_(2). Applied physics letters, 64 (10). pp. 1239-1241. ISSN 0003-6951

Mártil de la Plaza, Ignacio and González Díaz, Germán and Sánchez Quesada, Francisco and Santamaría Sánchez-Barriga, Jacobo (1990) Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films. Journal of Applied Physics, 68 (1). pp. 189-194. ISSN 0021-8979

González Díaz, Germán and Artús, L. and Blanco, N and Cuscó, R. and Hernández, S. (2003) Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering. Journal of Applied Physics, 93 (5). pp. 2659-2662. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2011) Sub-bandgap absorption in Ti implanted Si over the Mott limit. Journal of Applied Physics, 109 (11). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells. Japanese Journal of Applied Physics, 52 (12). ISSN 0021-4922

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Sub-bandgap spectral photo-response analysis of Ti supersaturated Si. Applied physics Letters, 101 (19). ISSN 0003-6951

González Díaz, Germán and Artús, L. and Calleja, E. and Cuscó, R. and Iborra, E. and Jiménez, J. and Pastor, D. and Peiró, F. (2006) The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire. Journal of Applied Physics, 100 (4). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Fernández, M. (1997) The influence of SiNx:H film properties on the electrical characteristics of metal-insulator-semiconductor devices. Semiconductor Science and Technology, 12 (12). pp. 1650-1653. ISSN 0268-1242

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) The intermediate band approach in the third solar cell generation context. In Proceedings of the 2013 Spanish Conference on Electron Devices. IEEE, pp. 297-300. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (1999) Thermal stability of a-SiNx: H films deposited by plasma electron cyclotron resonance. Journal of vacuum science & technology a: Vacuum surfaces and films, 17 (4 - 1ª). pp. 1280-1284. ISSN 0734-2101

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2010) Thermal stability of intermediate band behavior in Ti implanted Si. Solar Energy Materials and Solar Cells, 94 (11). pp. 1907-1911. ISSN 0927-0248

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (1999) Thermally induced changes in the optical properties of SiNx : H films deposited by the electron cyclotron resonance plasma method. Journal of Applied Physics, 86 (4). pp. 2055-2061. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán (1999) Thermally induced improvements on SiNx: H/InP devices. Journal of vacuum science & technology a: Vacuum surfaces and films, 17 (4 - 2ª). pp. 2178-2182. ISSN 0734-2101

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2002) Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx : H films. Journal of Applied Physics, 92 (4). pp. 1906-1913. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2008) Titanium doped silicon layers with very high concentration. Journal of Applied Physics, 104 (1). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2011) Two-layer Hall effect model for intermediate band Ti-implanted silicon. Journal of Applied Physics, 109 (6). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2011) UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation. Semiconductor Science and Technology, 26 (11). ISSN 0268-1242

González Díaz, Germán and Martín, J.M. and Artús, L. and Cuscó, R. (1994) Up to fifth-order Raman scattering of InP under nonresonant conditions. Physical Review B, 50 (16). pp. 11552-11555. ISSN 0163-1829

León Yebra, Carlos and Martín, J. M. and Santamaría Sánchez-Barriga, Jacobo and Skarp, J. and González Díaz, Germán and Sánchez Quesada, Francisco (1996) Use of Kramers-Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps. Journal of applied physics, 79 (10). pp. 7830-7836. ISSN 0021-8979

This list was generated on Sun Feb 23 00:06:04 2020 CET.