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Number of items: 7.

González Díaz, Germán and Martín, J.M. and Barbolla, J. and Castán, E. and Dueñas, S. and Pinacho, R. and Quintanilla, L. (1997) Deep levels in p(+)-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP. Journal of Applied Physics, 81 (7). pp. 3143-3150. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Martín, J.M. (1998) Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size. Thin Solid Films, 315 (01-02). pp. 22-28. ISSN 0040-6090

Mártil de la Plaza, Ignacio and González Díaz, Germán and García, S. and Martín, J.M. and Fernández, M. (1998) Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method. Thin Solid Films, 317 (01-02). pp. 116-119. ISSN 0040-6090

Mártil de la Plaza, Ignacio and González Díaz, Germán and Martín, J.M. and García, S. (1998) Experimental verification of the physics and structure of the Bipolar Junction Transistor. IEEE Transactions on Education, 41 (3). pp. 224-228. ISSN 0018-9359

González Díaz, Germán and Martín, J.M. and Artús, L. and Cuscó, R. and Ibañez, J. (1997) Raman-scattering criteria for characterization of anneal-restored zinc blende single crystals: Application to Si+-implanted InP. Journal of Applied Physics, 82 (8). pp. 3736-3739. ISSN 0021-8979

González Díaz, Germán and Martín, J.M. and Artús, L. and Cuscó, R. (1994) Up to fifth-order Raman scattering of InP under nonresonant conditions. Physical Review B, 50 (16). pp. 11552-11555. ISSN 0163-1829

Dabrio, Cristino J. and Martín, J.M. (1981) Yesos diagenéticos en la Depresión de Granada. Boletín de la Real Sociedad Española de Historia Natural. Sección geológica , 79 . pp. 215-223. ISSN 0583-7510

This list was generated on Sat Dec 20 03:18:17 2014 CET.