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Number of items: 27.

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2011) Depth profile study of Ti implanted Si at very high doses. Journal of Applied Physics, 110 (6). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Double ion implantation and pulsed laser melting processes for third generation solar cells. International Journal of Photoenergy, 2013 . ISSN 1110-662x

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Electrical decoupling effect on intermediate band Ti-implanted silicon layers. Journal of Physics D-Applied Physics, 46 (13). ISSN 0022-3727

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material. In Proceedings of the 2013 Spanich Conference on Electron Devices (CDE 2013). Spanish Conference on Electron Devices . IEEE, pp. 377-380. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Electronic transport properties of Ti-impurity band in Si. Journal of Physics D-Applied Physics, 42 (8). ISSN 0022-3727

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon. Applied physics Letters, 103 (3). ISSN 0003-6951

Mártil de la Plaza, Ignacio and Olea Ariza, Javier and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2006) Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O-2 ratios. Materials Science in Semiconductor Processing, 9 (6). pp. 1020-1024. ISSN 1369-8001

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and San Andres Serrano, Enrique (2009) High Quality Ti-Implanted Si Layers Above Solid Solubility Limit. In Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, pp. 38-41. ISBN 978-1-4244-2838-0

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and San Andres Serrano, Enrique (2010) High quality Ti-implanted Si layers above the Mott limit. Journal of Applied Physics, 107 (10). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells. In Proceedings of the 2013 Spanisch Conference on Electron Devices. IEEE, pp. 337-340. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Intermediate band mobility in heavily titanium-doped silicon layers. Solar Energy Materials and Solar Cells, 93 (9). pp. 1668-1673. ISSN 0927-0248

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2012) Interstitial Ti for intermediate band formation in Ti-supersaturated silicon. Journal of Applied Physics, 112 (11). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Material. In Ion Implantation Technology. Amer Inst. Physics, pp. 54-57.

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Laser thermal annealing effects on single crystal gallium phosphide. Journal of Applied Physics, 106 (5). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material. Applied physics Letters, 94 (4). ISSN 0003-6951

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Low temperature intermediate band metallic behavior in Ti implanted Si. Thin Solid Films, 520 (21). pp. 6614-6618. ISSN 0040-6090

Olea Ariza, Javier (2010) Procesos de implantación iónica para semiconductores de banda intermedia. [Thesis]

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2009) Pulsed Laser Melting Effects on Single Crystal Gallium Phosphide. In Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, pp. 42-45. ISBN 978-1-4244-2838-0

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si. Journal of Applied Physics, 114 (5). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2011) Sub-bandgap absorption in Ti implanted Si over the Mott limit. Journal of Applied Physics, 109 (11). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells. Japanese Journal of Applied Physics, 52 (12). ISSN 0021-4922

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Sub-bandgap spectral photo-response analysis of Ti supersaturated Si. Applied physics Letters, 101 (19). ISSN 0003-6951

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) The intermediate band approach in the third solar cell generation context. In Proceedings of the 2013 Spanish Conference on Electron Devices. IEEE, pp. 297-300. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2010) Thermal stability of intermediate band behavior in Ti implanted Si. Solar Energy Materials and Solar Cells, 94 (11). pp. 1907-1911. ISSN 0927-0248

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2008) Titanium doped silicon layers with very high concentration. Journal of Applied Physics, 104 (1). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier (2011) Two-layer Hall effect model for intermediate band Ti-implanted silicon. Journal of Applied Physics, 109 (6). ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2011) UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation. Semiconductor Science and Technology, 26 (11). ISSN 0268-1242

This list was generated on Thu Oct 23 03:10:52 2014 CEST.