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Number of items: 61.

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide. Journal of Materials Science: Materials in Electronics, 14 (5-7). pp. 375-378. ISSN 0957-4522

González Díaz, Germán and Pastor, D. and García Hemme, Eric and Montero, Daniel and García Hernansanz, Rodrigo and Olea Ariza, Javier and Prado Millán, Álvaro del and San Andres Serrano, Enrique and Mártil de la Plaza, Ignacio (2017) A robust method to determine the contact resistance using the van der Pauw set up. Measurement, 98 . pp. 151-158. ISSN 0263-2241

Prado Millán, Álvaro del and San Andres Serrano, Enrique and Mártil de la Plaza, Ignacio and González Díaz, Germán and Kliefoth, K. and Füssel, W. (2004) Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices. Semiconductor Science and Technology, 19 (2). pp. 133-141. ISSN 0268-1242

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method. Journal of Applied Physics, 94 (12). pp. 7462-7469. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2004) Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method. Thin Solid Films, 459 (1-2). pp. 203-207. ISSN 0040-6090

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2002) Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance. Vacuum, 67 (3-4). pp. 507-512. ISSN 0042-207X

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2002) Compositional analysis of SiOxNy : H films by heavy-ion ERDA: the problem of radiation damage. Surface and interface analysis, 34 (1). pp. 749-753. ISSN 0142-2421

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2000) Compositional analysis of amorphous SiNx : H films by ERDA and infrared spectroscopy. Surface and interface analysis, 30 (1). pp. 534-537. ISSN 0142-2421

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2004) Compositional analysis of thin SiOxNy : H films by heavy-ion ERDA, standard RBS, EDX and AES: a comparison. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 217 (2). pp. 237-245. ISSN 0168-583X

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2004) Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates. Japanese Journal of Applied Physics Part-1: Regular Papers Short Notes & Review Papers, 43 (1). pp. 66-70. ISSN 0021-4922

Mártil de la Plaza, Ignacio and Prado Millán, Álvaro del (2000) Defect structure of SiNx : H films and its evolution with annealing temperature. Journal of Applied Physics, 88 (4). pp. 2149-2151. ISSN 0021-8979

García Hernansanz, Rodrigo and García Hemme, Eric and Montero Álvarez, Daniel and Prado Millán, Álvaro del and Olea Ariza, Javier and San Andres Serrano, Enrique and Mártil de la Plaza, Ignacio and González Díaz, Germán (2016) Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells. IEEE journal of photovoltaics, 6 (5). ISSN 2156-3381

Prado Millán, Álvaro del (2004) Depósito de películas de SiOxNyHz mediante la técnica ECR-PECVD, caracterización y estabilidad térmica. [Thesis]

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Double ion implantation and pulsed laser melting processes for third generation solar cells. International Journal of Photoenergy, 2013 . ISSN 1110-662x

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2010) Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks. Journal of Applied Physics, 107 (11). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2009) Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks. In Proceedings of the 2009 Spanish Conference on Electron Devices. IEEE, pp. 1-4. ISBN 978-1-4244-2838-0

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (1999) Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance. Journal of vacuum science & technology a: Vacuum surfaces and films, 17 (4 - 1ª). pp. 1263-1268. ISSN 0734-2101

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films. Journal of Materials Science: Materials in Electronics, 14 (5-7). pp. 287-290. ISSN 0957-4522

García, Héctor and Castán, Helena and Dueñas, Salvador and Bailón, Luis and García Hernansanz, Rodrigo and Olea Ariza, Javier and Prado Millán, Álvaro del and Mártil de la Plaza, Ignacio (2016) Electrical characterization of amorphous silicon MIS-based structures for HIT solar cell applications. Nanoscale research letters, 11 . ISSN 1556-276X

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Electrical decoupling effect on intermediate band Ti-implanted silicon layers. Journal of Physics D-Applied Physics, 46 (13). ISSN 0022-3727

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2001) Electrical properties of rapid thermally annealed SiNx : H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy. Semiconductor Science and Technology, 16 (7). pp. 534-542. ISSN 0268-1242

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material. In Proceedings of the 2013 Spanich Conference on Electron Devices (CDE 2013). Spanish Conference on Electron Devices . IEEE, pp. 377-380. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon. Applied physics Letters, 103 (3). ISSN 0003-6951

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (1999) Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature. Thin Solid Films, 343 (17SI). pp. 437-440. ISSN 0040-6090

Mártil de la Plaza, Ignacio and Olea Ariza, Javier and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2006) Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O-2 ratios. Materials Science in Semiconductor Processing, 9 (6). pp. 1020-1024. ISSN 1369-8001

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells. In Proceedings of the 2013 Spanisch Conference on Electron Devices. IEEE, pp. 337-340. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2004) Influence of H on the composition and atomic concentrations of "N-rich" plasma deposited SiOxNyHz films. Journal of Applied Physics, 95 (10). pp. 5373-5382. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2008) Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon. Journal of Applied Physics, 104 (9). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2003) Interfacial state density and conductance-transient three-dimensional profiling of disordered-induced gap states on metal insulator semiconductor capacitors fabricated from electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiOxNyHz films. Japanese Journal of Applied Physics, 42 (8). pp. 4978-4981. ISSN 0021-4922

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Ion Implantation and Pulsed Laser Melting Processing for the Development of an Intermediate Band Material. In Ion Implantation Technology. American Institute of Physics, pp. 54-57.

García Hernansanz, Rodrigo and García Hemme, Eric and Montero Álvarez, Daniel and Olea Ariza, Javier and San Andres Serrano, Enrique and Prado Millán, Álvaro del and Ferrer, F. J. and Mártil de la Plaza, Ignacio and González Díaz, Germán (2016) Limitations of high pressure sputtering for amorphous silicon deposition. Materials research express, 3 (3). ISSN 2053-1591

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Low temperature intermediate band metallic behavior in Ti implanted Si. Thin Solid Films, 520 (21). pp. 6614-6618. ISSN 0040-6090

García Hemme, Eric and García Hernansanz, Rodrigo and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Álvaro del and Mártil de la Plaza, Ignacio and González Díaz, Germán (2015) Meyer Neldel rule application to silicon supersaturated with transition metals. Journal of physics D: applied physics, 48 (7). ISSN 0022-3727

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films. Journal of Applied Physics, 94 (2). pp. 1019-1029. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (2001) Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealing. Physical review B, 63 (24). ISSN 0163-1829

Olea Ariza, Javier and Algaidy, S. and Prado Millán, Álvaro del and García Hemme, Eric and García Hernansanz, Rodrigo and Montero, Daniel and Caudevilla Gutiérrez, Daniel and González Díaz, Germán and Soria, E. and Gonzalo, J. (2020) On the properties of GaP supersaturated with Ti. Journal of alloys and compounds, 820 . ISSN 0925-8388

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition. Journal of Applied Physics, 93 (11). pp. 8930-8938. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2007) Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2. Applied physics Letters, 91 (19). ISSN 0003-6951

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2005) Oxygen to silicon ratio determination of SiOXHY thin films. Thin Solid Films, 492 (1-2). pp. 232-235. ISSN 0040-6090

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2005) Physical properties of high pressure reactively sputtered TiO2. Journal of Vaccum Scuebce & Technology A, 23 (6). pp. 1523-1530. ISSN 0734-2101

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2008) Physical properties of high pressure reactively sputtered hafnium oxide. Vacuum, 82 (12). pp. 1391-1394. ISSN 0042-207X

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2002) Physical properties of plasma deposited SiOx thin films. Vacuum, 67 (3-4). pp. 525-529. ISSN 0042-207X

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2004) Procesos de oxidación de Si mediante plasma de resonancia ciclotrónica de electrones. Boletín de la Sociedad Española de Cerámica y Vidrio, 43 (2). pp. 379-382. ISSN 0366-3175

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2002) Rapid thermal annealing effects on plasma deposited SiOx : H films. Vacuum, 67 (3-4). pp. 531-536. ISSN 0042-207X

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators. Journal of Vacuum Science & Technology B, 21 (4). pp. 1306-1313. ISSN 1071-1023

Mártil de la Plaza, Ignacio and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2000) Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx : H films deposited by electron cyclotron resonance. Journal of Applied Physics, 87 (3). pp. 1187-1192. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2003) Rapid thermally annealed plasma deposited SiNx : H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP. Journal of Applied Physics, 94 (4). pp. 2642-2653. ISSN 0021-8979

Olea Ariza, Javier and López, E. and Antolín, E. and Martí, A. and Luque, A. and García Hemme, Eric and Pastor, D. and García Hernansanz, Rodrigo and Prado Millán, Álvaro del and González Díaz, Germán (2016) Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap. Journal of physics D: applied physics, 49 (5). ISSN 0022-3727

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Pastor Pastor, David and Prado Millán, Álvaro del (2014) Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector. Applied physics letters, 104 (21). ISSN 0003-6951

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si. Journal of Applied Physics, 114 (5). ISSN 0021-8979

Lucía Mulas, María Luisa and Prado Millán, Álvaro del and San Andrés Serrano, Enrique and Feijoo, P.C. and Toledano-Luque, M. (2010) Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties. Journal of Applied Physics, 107 (8). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2011) Sub-bandgap absorption in Ti implanted Si over the Mott limit. Journal of Applied Physics, 109 (11). ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells. Japanese Journal of Applied Physics, 52 (12). ISSN 0021-4922

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2012) Sub-bandgap spectral photo-response analysis of Ti supersaturated Si. Applied physics Letters, 101 (19). ISSN 0003-6951

Mártil de la Plaza, Ignacio and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2001) Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx : H/Si devices. Journal of Applied Physics, 90 (3). pp. 1573-1581. ISSN 0021-8979

Mártil de la Plaza, Ignacio and García Hemme, Eric and García Hernansanz, Rodrigo and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2013) The intermediate band approach in the third solar cell generation context. In Proceedings of the 2013 Spanish Conference on Electron Devices. IEEE, pp. 297-300. ISBN 978-1-4673-4666-5

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (1999) Thermal stability of a-SiNx: H films deposited by plasma electron cyclotron resonance. Journal of vacuum science & technology a: Vacuum surfaces and films, 17 (4 - 1ª). pp. 1280-1284. ISSN 0734-2101

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del (1999) Thermally induced changes in the optical properties of SiNx : H films deposited by the electron cyclotron resonance plasma method. Journal of Applied Physics, 86 (4). pp. 2055-2061. ISSN 0021-8979

Mártil de la Plaza, Ignacio and González Díaz, Germán and Prado Millán, Álvaro del and San Andres Serrano, Enrique (2002) Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx : H films. Journal of Applied Physics, 92 (4). pp. 1906-1913. ISSN 0021-8979

García Hernansanz, Rodrigo and García Hemme, Eric and Montero Álvarez, Daniel and Olea Ariza, Javier and Prado Millán, Álvaro del and Mártil de la Plaza, Ignacio and Voz Sánchez, Cristobal and Gerling, Luis and Puigdollers, Joaquin and Alcubilla, R. (2018) Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer. Solar energy materials and solar cells, 185 . pp. 61-65. ISSN 0927-0248

Mártil de la Plaza, Ignacio and García Hemme, Eric and González Díaz, Germán and Olea Ariza, Javier and Prado Millán, Álvaro del (2011) UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation. Semiconductor Science and Technology, 26 (11). ISSN 0268-1242

This list was generated on Sun Jul 5 13:05:24 2020 CEST.