Universidad Complutense de Madrid
E-Prints Complutense


Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Number of items: 1.

Ottaviani, L. and Yakimov, E. and Hidalgo Alcalde, Pedro and Martinuzzi, S. (2004) Investigations of defects introduced in 4H-SiC n-type epitaxial layers by hydrogen DC plasma. Silicon Carbide and Related Materials 2003, Prts 1 and 2, 457-46 . pp. 509-512. ISSN 0255-5476

This list was generated on Thu Jun 20 14:01:01 2019 CEST.