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Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces

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Luna, Esperanza and Guzmán, Álvaro and Trampert, Achim and Álvarez Silvar, Gabriel (2012) Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces. Physical Review Letters, 109 (12). ISSN 0031-9007

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Official URL: http://prl.aps.org/pdf/PRL/v109/i12/e126101


URLURL Type
http://prl.aps.orgPublisher
http://arxiv.org/abs/1206.6983Organisation


Abstract

We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by two-dimensional island formation, wherein cooperative effects are described by a specific functional dependence of the sticking coefficient on the surface coverage. Experimental results confirm that, except in the very early stages, island growth prevails over nucleation as the mechanism governing the interface development and ultimately determines the sigmoidal shape of the chemical profile in these two-dimensional-grown layers. In agreement with our experimental findings, the model also predicts a minimum value of the interfacial width, with the minimum attainable value depending on the chemical identity of the species.


Item Type:Article
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© American Physical Society

Uncontrolled Keywords:Chemisorption, Nanocrystals, Oxidation, Mechanism, Kinetics.
Subjects:Sciences > Physics > Physics-Mathematical models
ID Code:20351
Deposited On:04 Apr 2013 10:59
Last Modified:10 Dec 2018 15:09

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