Publication: Indium Zinc Oxide pyramids with pinholes and nanopipes
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Publication Date
2011-04-28
Authors
Amati, Mateo
Piqueras de Noriega, Javier
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amer Chemical Soc
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Abstract
Micropyramids of zinc-doped indium oxide have been grown by thermal treatments of compacted InN and ZnO powders at temperatures between 700:and 900 degrees C Under argon flow. X-ray diffraction (XRD) measurements and energy-dispersive X-ray (EDS) mappings as well as local EDS spectra enable the identification of rough surfaces of the pyramids with the nucleation of a shell of nanocrystallites with high Zn/In ratio because of the formation of Zn(k)In(2)O(k+3). Some of the pyramids have a truncated tip with pinholes with regular crystalline facets. The apexes of these pinhole's present a hollow core or nanopipe The possible relation of the nanopipes with a dislocation driven growth is discussed. A growth model is proposed from the morphology evolution of the pyramids during the formation of the In(2)O(3)-ZnO (IZO) compound X-ray photoelectron spectroscopy and microscopy (XPS-ESCA) Measurements are used to discuss the Zn incorporation as a dopant and the formation of Zn(k)In(2)O(k+3) ternaries. Cathodoluminescence (CL) in the scanning electron microscopy (SEM) shows a dependence of the luminescence of the microstructures on the Zn concentration and the growth temperature.
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©2011 American Chemical Society.
This work was supported by MCINN (MAT2009-07882, CSD2009-00013) and UCM-BSCH (GR58-08).
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(1) Magdas, D. A.; Cremades, A; Piqueras, J. Appl. Phys. Lett. 2006, 88, 113107.
(2) Law, M.; Sirbuly, D. J.; Johnson, J. C.; Goldberger, J.; Saykally, R. J.; Yang, P. Science 2004, 305, 1269–1273.
(3) Maestre, D.; Cremades, A.; Gregoratti, L.; Piqueras, J. J. Nanosci. Nanotechnol. 2008, 8, 6533–6537.
(4) Maestre, D.; Cremades, A.; Piqueras, J. J. Appl. Phys. 2005, 97, 044316.
(5) Hao, Y.; Meng, G.; Ye, Ch.; Zhang, L. Cryst. Growth Des. 2005, 5, 1617–1621.
(6) Masuda, Y.; Kinoshita, N.; Sato, F.; Koumoto, K. Cryst. Growth Des. 2006, 6, 75–78.
(7) Ramamoorthy, K.; Kumar, K.; Chandramohan, R.; Sankaranarayanan, K. Mater. Sci. Eng., B 2006, 126, 1–15.
(8) Ito, N.; Sato, Y.; Song, P. K.; Kaijio, A.; Inoue, K.; Shigesato, Y. Thin Solid Films 2006, 496, 99–103.
(9) Lee, W. J.; Fang, Y. K.; Ho, J. J.; Chen, C. Y.; Chiou, L. H.; Wang, S. J.; Dai, F.; Hsieh, T.; Tsai, R. Y.; Huang, D.; Ho, F. C. Solid-State Electron. 2002, 46, 477–480.
(10) Hu, G.; Kumar, B.; Gong, H.; Chor, E. F.; Wu, P. Appl. Phys. Lett. 2006, 88, 101901.
(11) Makise, K.; Kokubo, N.; Takada, S.; Yamaguti, T.; Ogura, S.; Yamada, K.; Shinozaki, B.; Yano, K.; Inoue, K.; Nakamura, H. Sci. Technol. Adv. Mater. 2008, 9, 044208.
(12) Heindl, J.; Strunk, H. P. Phys. Status Solidi B 1996, 193, K1–K3.
(13) Hawkridge, M. E.; Cherns, D. Appl. Phys. Lett. 2005, 87, 221903.
(14) Qian, W.; Rohrer, G. S.; Skowronski, M.; Doverspike, K.; Rowland, L. B.; Gaskill, D. K. Appl. Phys. Lett. 1995, 67, 2284.
(15) Herrera, M.; Cremades, A.; Piqueras, J.; Stutzmann, M.; Ambacher, O. J. Appl. Phys. 2004, 95, 5305–5310.
(16) Cho, H. K.; Lee, J. Y.; Yang, G. M.; Kim, C. S. Appl. Phys. Lett. 2001, 79, 215–217.
(17) Herrera, M.; Cremades, A.; Stutzmann, M.; Piqueras, J. Superlattices Microstruct. 2009, 45, 435–443.
(18) Frank, F. C. Acta Crystallogr. 1951, 4, 497–501.
(19) Maestre, D.; Cremades, A.; Piqueras, J.; Gregoratti, L. J. Appl. Phys. 2008, 103, 093531.
(20) Maestre, D.; Cremades, A.; Gregoratti, L.; Piqueras, J. J. Phys. Chem. C 2010, 114, 3411–3415.
(21) Lim, S. K.; Tambe, M. J.; Brewster, M. M.; Grade cak, S. Nano Lett. 2008, 8, 1386–1392.
(22) Farvid, S. S.; Dave, N.; Wang, T.; Radovanovic, P. V. J. Phys. Chem. C 2009, 113, 15928–15933.
(23) Alem an, B.; Fern andez, P.; Piqueras, J. Appl. Phys. Lett. 2009, 95, 013111.
(24) Hiramatsu, H.; Seo, W. S.; Koumoto, K. Chem. Mater. 1998, 10, 3033–3039.
(25) Yan, Y.; Da Silva, J. L. F.; Wei, S. H.; Al-Jassim, M. Appl. Phys. Lett. 2007, 90, 261904.
(26) Fan, J. C. C.; Goodenough, J. B. J. Appl. Phys. 1977, 48, 3524.
(27) Kumar, B.; Gong, H.; Akkipeddi, R. J. Appl. Phys. 2005, 97, 063706.
(28) Maestre, D.; Martínez de Velasco, I.; Cremades, A.; Amati, M.; Piqueras, J. J. Phys. Chem. C 2010, 114, 11748–11752.
(29) Wang, R. X.; Beling, C. D.; Fung, S.; Djuri si c, A. B.; Ling, C. C.; Li, S. J. Appl. Phys. 2005, 97, 033504.
(30) Lim, W. T.; Norton, D. P.; Jang, J. H.; Craciun, V.; Pearton, S. J.; Ren, F. Appl. Phys. Lett. 2008, 92, 122102.
(31) Zhang, W. F.; He, Z. B.; Yuan, G. D.; Jie, J. S.; Luo, L. B.; Zhang, X. J.; Chen, Z. H.; Lee, C. S.; Zhang, W. J.; Lee, S. T. Appl. Phys. Lett. 2009, 94, 123103.
(32) Yamamoto, T.; Katayama-Yoshida, H. J. Cryst. Growth 2000, 214, 552–555.
(33) Walsh, A.; Da Silva, J. L. F.; Yan, Y.; Al-Jassim, M.; Wei, S. H. Phys. Rev. B 2009, 79, 073105.
(34) Jia, H.; Zhang, Y.; Chen, X.; Shu, J.; Luo, X.; Zhang, Z.; Yu, D. Appl. Phys. Lett. 2003, 82, 4146–4148.
(35) Magdas, D. A.; Cremades, A.; Piqueras, J. J. Appl. Phys. 2006, 100, 094320.
(36) Wang, Z. L. J. Phys. Chem. B 2000, 104, 1153–1175.
(37) Yan, Y. G.; Zhang, Y.; Zeng, H. B.; Zhang, L. D. Cryst. Growth Des. 2007, 7, 940–943.
(38) Sears, G. W. J. Chem. Phys. 1956, 25, 637–642.
(39) Bierman, M. J.; Lau, Y. K. A.; Kvit, A. V.; Schmitt, A. L.; Jin, S. Science 2008, 320, 1060–1063.
(40) Lee, M. S.; Choi, W. C.; Kim, E. K.; Kim, C. K.; Min, S. K. Thin Solid Films 1996, 279, 1–3.
(41) Mazzera, M.; Zha, M.; Calestani, D.; Zappettini, A.; Lazzarini, L.; Salviati, G.; Zanotti, L. Nanotechnology 2007, 18, 355707.
(42) Lany, S.; Zunger, A. Phys. Rev. Lett. 2007, 98, 045501.
(43) Dai, L.; Chen, X. L.; Jian, J. K.; He, M.; Zhou, T.; Hu, B. Q. Appl. Phys. A: Mater. Sci. Process. 2002, 75, 687–689.
(44) Zeng, F.; Zhang, X.; Wang, J.; Wang, L.; Zhang, L. Nanotechnology 2004, 15, 596–600.
(45) Cao, H.; Qiu, X.; Liang, Y.; Zhu, Q. Appl. Phys. Lett. 2003, 83, 761–763.
(46) Zheng, M. J.; Zhang, L. D.; Li, G. H.; Zhang, X. Y.; Wang, X. F. Appl. Phys. Lett. 2001, 79, 839–841.
(47) Weiher, L. R.; Rinaldi, R. J. Appl. Phys. 1966, 37, 299.
(48) King, P. D. C.; Veal, T. D.; Fuchs, F.; Wang, Ch. Y.; Payne, D. J.; Bourlange, A.; Zhang, H.; Bell, G. R.; Cimalla, V.; Ambacher, O.; Egdell, R. G.; Bechstedt, F.; McConville, C. F. Phys. Rev. B 2009, 79, 205211.
(49) Walsh, A.; Da Silva, J. L. F.; Wei, S. H.; K€orber, C.; Klein, A.; Piper, L. F. J.; DeMasi, A.; Smith, K. E.; Panaccione, G.; Torelli, P.; Payne, D. J.; Bourlange, A.; Egdell, R. G. Phys. Rev. Lett. 2008, 100, 167402.
(50) Khomenkova, L.; Fern andez, P.; Piqueras, J. Cryst. Growth Des. 2007, 7, 836–839.
(51) Grym, J.; Fern andez, P.; Piqueras, J. Nanotechnology 2005, 16, 931–935.