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Complex defect structure in the core of Sn-Doped In2O3 nanorods and its relationship with a dislocation-driven growth mechanism

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Maestre Varea, David y Haeussler, D. y Cremades Rodríguez, Ana Isabel y Jaeger, W. y Piqueras de Noriega, Javier (2011) Complex defect structure in the core of Sn-Doped In2O3 nanorods and its relationship with a dislocation-driven growth mechanism. Journal of physical chemistry C, 115 (37). pp. 18083-18087. ISSN 1932-7447

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URL Oficial: http://pubs.acs.org/doi/abs/10.1021/jp204579u


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Resumen

Sn-doped In2O3 arrow-shaped nanorods have been grown by a catalyst-free evaporation deposition method. Transmission electron microscopy (TEM) investigations reveal a complex defect structure consisting of nanoprecipitates, dislocation loops, and voids, in the core of the nanorods, extending all along the growth axis. The nanoprecipitates are Sn or Sn-rich and appear sometimes associated with small voids. The voids appear aligned in rows or discontinuous empty nanochannels along the nanorod core. TEM images depict the presence of surface ripples perpendicular to the growth direction, with typical distances of less than 10 nm. The relationship of the observed defect structure with a dislocation-driven growth of the nanorods is discussed.


Tipo de documento:Artículo
Información Adicional:

© 2011 American Chemical Society.
This work was supported by MICINN (MAT2009-07882,
CSD2009-00013) and UCM-BSCH (Group 910146).

Palabras clave:Oxide Nanowires, Indium Oxide, Nanostructures, Twist
Materias:Ciencias > Física > Física de materiales
Código ID:23008
Depositado:03 Oct 2013 12:25
Última Modificación:13 Feb 2018 14:56

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