Universidad Complutense de Madrid
E-Prints Complutense

Electrical properties of pinholes in GaN:Mn epitaxial films characterized by conductive AFM

Impacto

Downloads

Downloads per month over past year



Herrera, M. and Cremades Rodríguez, Ana Isabel and Stutzmann, M. and Piqueras de Noriega, Javier (2009) Electrical properties of pinholes in GaN:Mn epitaxial films characterized by conductive AFM. Superlattices and Microstructures, 46 (4 may). pp. 435-443. ISSN 0749-6036

[img] PDF
Restringido a Repository staff only

1MB

Official URL: http://www.sciencedirect.com/science/article/pii/S0749603608003078


URLURL Type
http://www.sciencedirect.comPublisher


Abstract

Mn doped GaN films have been studied by conductive Atomic Force Microscopy (AFM), Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC). AFM measurements revealed the presence of pinholes with diameters between 130 and 380 nm. The distribution, density and size of the pinholes depend on the Mn doping concentration. AFM Leakage Current images (LC) show a defined contrast at the pinhole planes {101ī} in the sample with Mn concentration of 6.2 x 10_20 cm_-3. For the sample with an Mn concentration of 1.1 X 10_20 cm_-3, LC contrast appears around the pinholes, while no LC contrast was observed for sample with lower Mn concentration. CL measurements indicate that the samples exhibit strain related to Mn incorporation. In correlation with LC measurements, EBIC images show that pinholes are recombination sites. The combination of these techniques enabled us to analyze the Frenkel-Poole conduction in the samples and its relationship with the residual strain and the doping concentration in the films, which would exclude the mechanism of conduction through dislocations.


Item Type:Article
Additional Information:

© 2008 Elsevier Ltd. All rights reserved.
This work was supported by MEC (Project MAT2006-01259).
International Workshop on Beam Injection Assessment of Microstructure in Semiconductors (9. 2008. Toledo).
(BIAMS 2008)

Uncontrolled Keywords:Atomic-Force Microscopy, Reverse-Bias Leakage, V-Shaped Pits, Formation Mechanism, Schottky Contacts, Dislocations, Nanotubes, Diodes, Layers
Subjects:Sciences > Physics > Materials
ID Code:23073
Deposited On:09 Oct 2013 18:37
Last Modified:06 May 2016 15:51

Origin of downloads

Repository Staff Only: item control page