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Direct observation of potential barrier formation at grain boundaries of SnO_2 ceramics



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Maestre Varea, David y Cremades Rodríguez, Ana Isabel y Piqueras de Noriega, Javier (2004) Direct observation of potential barrier formation at grain boundaries of SnO_2 ceramics. Semiconductor Science and Technology, 19 (11). pp. 1236-1239. ISSN 0268-1242

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URL Oficial: http://iopscience.iop.org/0268-1242/19/11/004

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Remote electron beam induced current (REBIC) and cathodoluminescence (CL) modes in the scanning electron microscope (SEM) have been used to investigate SnO2 sintered samples. The study of the electrically active boundaries present in the oxide shows a characteristic peak and trough (PAT) contrast after thermal treatments in oxygen. Temperature-dependent measurements of the REBIC contrast show the presence of a shallow defect level 60 meV below the conduction band. This level is asigned to oxygen species adsorbed on the defect-rich boundaries. Evolution of REBIC contrast of the grain boundaries with excitation density enabled us to perform local measurements of minority carrier diffusion length.

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© 2004 IOP Publishing Ltd.
This work has been supported by MCYT (Project MAT 2003-00455). DM acknowledges a grant from MCYT.

Palabras clave:Beam-Induced-Current, Electrical-Properties, Oxide; Spectroscopy, Varistors, Defects
Materias:Ciencias > Física > Física de materiales
Código ID:23245
Depositado:18 Oct 2013 18:15
Última Modificación:13 Feb 2018 15:03

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