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Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films

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Cremades Rodríguez, Ana Isabel and Narayanan, V.C. and Piqueras de Noriega, Javier and Lima, A.P. and Ambacher, O. and Stutzmann, M. (2001) Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films. Journal of Applied Physics , 90 (9). pp. 4868-4870. ISSN 0021-8979

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Official URL: http://jap.aip.org/japiau/v90/i9/p4868_s1


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Abstract

Plasma-induced molecular beam epitaxial AlInGaN heterostructures have been characterized by spatial resolved cathodoluminescence and x-ray energy dispersive microanalysis. Competitive incorporation of Al and In has been observed, with the formation of In-rich regions, showing enhanced luminescence around surface pinholes. These island-like In-rich regions are favored by growth at lower temperature due to the higher incorporation of indium into the alloy. The elastic strain relaxation associated to pinhole formation induces preferential local indium incorporation. The diffusion of carriers to these areas with reduced band gap enhances the luminescence emission of the quaternary film. The width and intensity of the luminescence appear to be sensitive to the mismatch between the quaternary film and the GaN layer below.


Item Type:Article
Additional Information:

© 2001 American Institute of Physics.
This work was partially supported by the Ministerio de Ciencia y Tecnologıía (Project No. Mat-2000-2119). The help of F. Sanz is acknowledged.

Uncontrolled Keywords:Alloys
Subjects:Sciences > Physics > Materials
ID Code:23345
Deposited On:23 Oct 2013 17:49
Last Modified:13 Feb 2018 15:27

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