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Study of structural defects limiting the luminescence of InGaN single quantum wells

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Cremades Rodríguez, Ana Isabel and Piqueras de Noriega, Javier and Albrecht, M. and Stutzmann, M. and Strunk, H.P. (2002) Study of structural defects limiting the luminescence of InGaN single quantum wells. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 80 (17SI). pp. 313-317. ISSN 0921-5107

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Official URL: http://www.sciencedirect.com/science/article/pii/S0921510700006486


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Abstract

InGaN quantum well (QW) structures with different thicknesses have been characterised by means of cathodoluminescence (CL) in the scanning electron microscope and transmission electron microscopy (TEM), in order to study the structural defects that limit the device operation, Misfit dislocations appear as non-radiative centres in the CL images and compete with the quantum-well related luminescence. The luminescence red shift with increasing QW thickness has been found to be influenced by composition fluctuations.


Item Type:Article
Additional Information:

© 2001 Elsevier Science B.V. All rights reserved.
Bi-Annual Meeting of the International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (5. 2000. Heralkion, Grecia).
(EXMATEC 2000).
Thanks are due to Prof. Scholz for providing the
samples. This work was supported by project PB96-0639 (DGES)

Uncontrolled Keywords:Structure Laser-Diodes, Light-Emitting-Diodes, Degradation, Blue, Cathodoluminescence, Stress
Subjects:Sciences > Physics > Materials
ID Code:23346
Deposited On:29 Oct 2013 19:44
Last Modified:13 Feb 2018 15:35

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