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Structural and optical properties of Si-doped GaN

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Cremades Rodríguez, Ana Isabel and Gorgens, L. and Ambacher, O. and Stutzmann, M. and Scholz, F. (2000) Structural and optical properties of Si-doped GaN. Physical review B, 61 (4). pp. 2812-2818. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v61/i4/p2812_1


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Abstract

Structural and optical properties of Si-doped GaN thin films grown by metal-organic chemical vapor deposition have been studied by means of high resolution x-ray diffraction (XRD), atomic force microscopy, photoluminescence, photothermal deflection spectroscopy, and optical transmission measurements. The incorporation of silicon in the GaN films leads to pronounced tensile stress. The energy position of the neutral donor bound excitonic emission correlates with the measured stress. The stress induced near band gap luminescence shift is estimated to 19^+_-2 meV/GPa. An increasing concentration of dopant impurities in the films leads to asymmetries of the XRD and photoluminescence spectra, which are probably related to a Stress induced inhomogeneous distribution of dopants. Atomic force microscopy observations of surface modulation with increasing silicon doping support this latter statement. Transmission and photothermal deflection spectroscopy measurements are used to determine the band gap energy and Urbach energy of highly doped samples.


Item Type:Article
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©2000 The American Physical Society.
This work was supported by the Bayerische Forschungsstiftung (FOROPTO II). A.C. thanks the Spanish Ministerio de Educación y Cultura for a grant.

Uncontrolled Keywords:Photothermal Deflection Spectroscopy, Quantum Dots, Photoluminescence, Surfaces, Strain, Films, Luminescence, Absorption, Epitaxy; Growth
Subjects:Sciences > Physics > Materials
ID Code:23406
Deposited On:05 Nov 2013 19:24
Last Modified:07 Feb 2014 11:01

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