Universidad Complutense de Madrid
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Cathodoluminescence from implanted and anodized polycrystalline silicon films

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Plugaru, R. y Craciun, G. y Nastase, N. y Méndez Martín, Bianchi y Cremades Rodríguez, Ana Isabel y Piqueras de Noriega, Javier y Nogales Díaz, Emilio (2000) Cathodoluminescence from implanted and anodized polycrystalline silicon films. Journal of Porous Materials, 7 (1-mar). pp. 291-294. ISSN 1380-2224

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URL Oficial: http://link.springer.com/article/10.1023%2FA%3A1009644401297?LI=true#


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Resumen

Luminescence emission of LPCVD polycrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show visible luminescence with dominant blue band. The relative intensity of blue emission is enhanced by implantation and by slight anodization treatments. Our investigations are consistent with previous PL results and indicate that the origin of blue emission is related to quantum confinement effects. On the other hand, the effect of annealing in these samples is a reduction of the CL signal that could be related to the increase of the nanocrystals size.


Tipo de documento:Artículo
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©2000 Kluwer Academic Publishers.
International Conference on Porous Semiconductors - Science and Technology (PSST 98)(1.1998.Mallorca).
This work was supported by NATO (Grant HTECH. CRG 961392) and DGES (Project PB96-0639).

Palabras clave:Porous Silicon, Luminescence, Surface, Photoluminescence, Emission
Materias:Ciencias > Física > Física de materiales
Código ID:23407
Depositado:05 Nov 2013 19:38
Última Modificación:09 May 2016 15:03

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