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Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire

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Monteiro, T. and Pereira, E. and Correia, M. R. and Xavier, C. and Hofmann, D. M. and Meyer, B. K. and Fischer, S. and Cremades Rodríguez, Ana Isabel and Piqueras de Noriega, Javier (1997) Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire. Journal of Luminescence, 72-4 . pp. 696-700. ISSN 0022-2313

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Official URL: http://www.sciencedirect.com/science/article/pii/S0022231396003286


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Abstract

Mid-band-gap emissions in GaN epilayers grown on 6H-SiC and sapphire are studied by time-resolved spectroscopy (TRS). The yellow luminescence peaking at ca. 1.2 eV at low-temperature shifts to higher energies with increasing temperature. The presence of emission with the same characteristics in samples grown on different substrates and by different processes indicates that the defects responsible for the emission are of intrinsic nature but dependent on the cubic or hexagonal habit of the crystals. TRS are compared with cathodoluminescence (CL) in a scanning electron microscope (SEM) and optically detected magnetic resonance (ODMR) data.


Item Type:Article
Additional Information:

© 1997 Elsevier Science B.V. All rights reserved.
International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) (1996. Praga).
C. Xavier thanks JNICT for a grant BM/6613/95. This work was partially supported by JNICT Project0 no. BIC/C/CTM/1925/95.

Uncontrolled Keywords:GaN: Yellow Luminescence
Subjects:Sciences > Physics > Materials
ID Code:23593
Deposited On:21 Nov 2013 17:30
Last Modified:13 Feb 2018 14:40

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