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Cathodoluminescence study of ArF excimer laser-induced planarization of large grain diamond films

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Cremades Rodríguez, Ana Isabel and Piqueras de Noriega, Javier and Solís, J. (1996) Cathodoluminescence study of ArF excimer laser-induced planarization of large grain diamond films. Journal of Applied Physics , 79 (10). pp. 8118-8120. ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.362371


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Abstract

Planarization of large grain diamond films has been induced by 193 nm excimer laser irradiation. Secondary emission images and cathodoluminescence (CL) in the scanning electron microscope have been used to characterize-the irradiated area. Irradiation causes changes in the structure of defects involving nitrogen and vacancies. Evolution of the CL signal with the number of pulses indicates that the luminescence intensity tends to stabilize when a smooth film surface is obtained.


Item Type:Article
Additional Information:

© 1996 American Institute of Physics.
This work has been supported by DGICYT (Projects Nos. PB-93-1256 and HP94-098).

Uncontrolled Keywords:Chemical-Vapor-Deposition, Defects, Impurities
Subjects:Sciences > Physics > Materials
ID Code:23626
Deposited On:22 Nov 2013 16:29
Last Modified:07 Feb 2014 11:05

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