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Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN

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Catarino, N. and Nogales Díaz, Emilio and Franco, N. and Darakchieva, V. and Miranda, S.M.C. and Méndez Martín, Bianchi and Alves, E. and Marques, J.F. and Lorenz, K. (2012) Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN. EPL, 97 (6). ISSN 0295-5075

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Official URL: http://iopscience.iop.org/0295-5075/97/6/68004


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Abstract

The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, i.e. along the a-direction in a-plane and along the c-direction in c-plane GaN. The defect profile is bimodal with a pronounced surface damage peak and a second damage peak deeper in the bulk of the samples in both cases. For both surface orientations, the bulk damage saturates for high fluences. Interestingly, the saturation level for a-plane GaN is nearly three times lower than that for c-plane material suggesting very efficient dynamic annealing and strong resistance to radiation. a-plane GaN also shows superior damage recovery during post-implant annealing compared to c-plane GaN. For the lowest fluence, damage in a-plane GaN was fully removed and strong Eu-related red luminescence is observed. Although some residual damage remained after annealing for higher fluences as well as in all c-plane samples, optical activation was achieved in all samples revealing the red emission lines due to the ^5Do -> ^7F_2transition in the Eu_3+ ion. The presented results demonstrate a great promise for the use of ion beam processing for a-plane GaN based electronic devices as well as for the development of radiation tolerant electronics.


Item Type:Article
Additional Information:

Copyright c EPLA, 2012.
Financial support by FCT Portugal (Ciência 2007, PTDC/CTM/100756/2008) and through the bilateral Spanish-Portuguese project HP-2008-0071 is gratefully
acknowledged.

Uncontrolled Keywords:Radiation-Damage, Crystals, Nonpolar
Subjects:Sciences > Physics > Materials
ID Code:23992
Deposited On:19 Dec 2013 18:38
Last Modified:13 Feb 2018 14:13

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