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Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope



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López, Iñaki and Nogales Díaz, Emilio and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (2012) Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope. Physica Status Solidi A-Applications and Materials Science, 209 (1). pp. 113-117. ISSN 1862-6300

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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.201127406/full



The field emission properties of gallium oxide nanowires grown by thermal evaporation-deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined for Sn doped nanowires. X-ray photoelectron spectroscopy measurements have been performed to calculate the work function of Sn doped Ga2O3. The results show improved field emission properties of Sn doped Ga2O3 nanowires, with a lower threshold field (below 1.0 V/mu m). The obtained values are competitive with those achieved in other nanostructured materials, including carbon nanotubes.

Item Type:Article
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© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
This work has been supported by MICINN (Projects MAT 2009-07882 and Consolider Ingenio CSD 2009-00013) and by BSCH-UCM (Project GR35-10A-910146). The authors are grateful to Dr Luca Gregoratti at the Sincrotrone Trieste for useful advises on XPS measurements.

Uncontrolled Keywords:Ga2o3 Nanowires, Thin-Films, Beta-Ga2o3, Growth
Subjects:Sciences > Physics > Materials
ID Code:24194
Deposited On:15 Jan 2014 17:16
Last Modified:13 Feb 2018 15:12

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