Universidad Complutense de Madrid
E-Prints Complutense

Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope

Impacto

Downloads

Downloads per month over past year



López, Iñaki and Nogales Díaz, Emilio and Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Piqueras de Noriega, Javier (2012) Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope. Physica Status Solidi A-Applications and Materials Science, 209 (1). pp. 113-117. ISSN 1862-6300

[img] PDF
Restringido a Repository staff only hasta 31 December 2020.

380kB

Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.201127406/full


URLURL Type
http://onlinelibrary.wiley.comPublisher


Abstract

The field emission properties of gallium oxide nanowires grown by thermal evaporation-deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined for Sn doped nanowires. X-ray photoelectron spectroscopy measurements have been performed to calculate the work function of Sn doped Ga2O3. The results show improved field emission properties of Sn doped Ga2O3 nanowires, with a lower threshold field (below 1.0 V/mu m). The obtained values are competitive with those achieved in other nanostructured materials, including carbon nanotubes.


Item Type:Article
Additional Information:

© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
This work has been supported by MICINN (Projects MAT 2009-07882 and Consolider Ingenio CSD 2009-00013) and by BSCH-UCM (Project GR35-10A-910146). The authors are grateful to Dr Luca Gregoratti at the Sincrotrone Trieste for useful advises on XPS measurements.

Uncontrolled Keywords:Ga2o3 Nanowires, Thin-Films, Beta-Ga2o3, Growth
Subjects:Sciences > Physics > Materials
ID Code:24194
Deposited On:15 Jan 2014 17:16
Last Modified:13 Feb 2018 15:12

Origin of downloads

Repository Staff Only: item control page