Publication: Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope
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Publication Date
2012-01
Authors
López, Iñaki
Méndez Martín, Bianchi
Piqueras de Noriega, Javier
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Wiley-V C H Verlag GMBH
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Abstract
The field emission properties of gallium oxide nanowires grown by thermal evaporation-deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined for Sn doped nanowires. X-ray photoelectron spectroscopy measurements have been performed to calculate the work function of Sn doped Ga2O3. The results show improved field emission properties of Sn doped Ga2O3 nanowires, with a lower threshold field (below 1.0 V/mu m). The obtained values are competitive with those achieved in other nanostructured materials, including carbon nanotubes.
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© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
This work has been supported by MICINN (Projects MAT 2009-07882 and Consolider Ingenio CSD 2009-00013) and by BSCH-UCM (Project GR35-10A-910146). The authors are grateful to Dr Luca Gregoratti at the Sincrotrone Trieste for useful advises on XPS measurements.
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Física de materiales
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