Publication:
GeO_2 Nanowires Doped with Optically Active Ions

Loading...
Thumbnail Image
Full text at PDC
Publication Date
2009-10-01
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
Amer Chemical Soc
Citations
Google Scholar
Research Projects
Organizational Units
Journal Issue
Abstract
GeO_2 nanowires doped with Eu, Er, or Mn, as well as codoped with each of these ions and Sri, have been grown by a catalyst-free vapor-solid process. The incorporation of Sri has been found, in all cases, to favor the formation of straight wires, which make them more appropriate for waveguiding purposes. Cathodoluminescence (CL.) in the scanning electron microscope (SEM) has been used to investigate the complex light emission from the nanowires. Rare earth ion emission lines and defect related bands have been observed in Eu- and Er-doped nanowires. Optical coupling and waveguiding behavior of Er-doped GeO_2 nanowires have been demonstrated for green laser light and for Er excited luminescence in the wires. In Mn-doped GeO_2 nanowires a band centered at 1.75 eV had been detected. X-ray photoemission measurements show the presence of GeO oxide in the surface of the GeO_2 wires, which influences their native defect structure.
Description
© 2009 American Chemical Society. This work has been supported by MEC (Project MAT 2006-01259). The authors are grateful to Dr. Luca Gregoratti at the Sincrotron Trieste for useful advises on XPS measurements.
Unesco subjects
Keywords
Citation
(1) Law, M.; Sirbuly, D. J.; Johnson, J. C.; Goldberger, J.; Saykally, R.; Yang, P. D. Science 2004, 305, 1269. (2) Hidalgo, P.; Méndez, B.; Piqueras, J. Nanotechnology 2007, 18, 155203. (3) Palm, J.; Gan, F.; Zheng, B.; Michel, J.; Kimerling, L. C. Phys. ReV. B 1996, 54, 17603. (4) Priolo, F.; Franzò, G.; Pacifici, D.; Vinciguerra, V.; Iacona, F.; Irrera, A. J. Appl. Phys. 2001, 89, 264. (5) Heikenfeld, J.; Garter, M. J.; Lee, D. S.; Birkhahn, R. H.; Steckl, A. J. Appl. Phys. Lett. 1999, 75, 189. (6) Lozykowski, H. J.; Jadwisienczak, W. M.; Han, J.; Brown, I. G. Appl. Phys. Lett. 2000, 77, 767. (7) Peng, H.; Lee, C. W.; Everitt, H.; Munasinghe, C.; Lee, D. S.; Steckl, A. J. J. Appl. Phys. 2007, 102, 073520. (8) Strohhöfer, C.; Capecchi, S.; Fick, J.; Martucci, A.; Brusatin, G.; Guglielmi, M. Thin Solid Films 1998, 326, 99. (9) Wu, J.; Coffer, J. L.; Wang, Y.; Schulze, R. J. Phys. Chem. B 2009, 113, 12. (10) Nogales, E.; Méndez, B.; Piqueras, J.; Garcı´a, J. A. Nanotechnology 2009, 20, 115201. (11) Ishizumi, A.; Kanemitsu, Y. Appl. Phys. Lett. 2005, 86, 253106. (12) Wu, J.; Coffer, J. L. Chem. Mater. 2007, 19, 6266. (13) Hidalgo, P.; Me´ndez, B.; Piqueras, J. Nanotechnology 2008, 19, 455705. (14) Fitting, H. J.; Barfels, T.; Trukhin, A. N.; Schmidt, B. J. Non Cryst. Solids 2001, 259, 51. (15) Nogales, E.; Montone, A.; Cardinelli, F.; Méndez, B.; Piqueras, J. Semicond. Sci. Technol. 2002, 17, 267. (16) Kartopu, G.; Bayliss, S. C.; Hummel, R. E.; Ekinci, Y. J. Appl. Phys. 2004, 95, 3466. (17) Oku, T.; Nakayama, T.; Kuno, M.; Nozue, Y.; Wallenberg, L R.; Niihara, K.; Suganuma, K. Mater. Sci. Eng. B. 2000, 74, 242. (18) Singha, A.; Roy, A.; Kabiraj, D.; Kanjilal, D. Semicond. Sci.Technol. 2006, 21, 1691. (19) Dierolf, V.; Sandman, C.; Zavada.; Chow, P.; Herzog, B. J. Appl.Phys. 2004, 95, 5464. (20) Polman, A. J. Appl. Phys. 1997, 82, 1. (21) Nogales, E.; Garcı´a, J. A.; Méndez, B.; Piqueras, J. Appl. Phys. Lett. 2007, 91, 133108. (22) Voss, T.; Svacha, G. T.; Mu¨ller, S.; Ronning, C.; Konjhodzic, D.; Marlow, F.; Mazur, E. Nano Lett. 2007, 7, 3675. (23) Keavney, D. J.; King, S. T.; Cheung, S. H.; Weinert, M.; Li, L. Phys. ReV. Lett. 2005, 95, 257201. (24) Nogales, E.; García, J. A.; Méndez, B.; Piqueras, J. J. Appl. Phys. 2007, 101, 033517. (25) Molle, A.; Bhuyian, M. N. K.; Tallarida, G.; Fanciulli, M. Appl. Phys. Lett. 2006, 89, 083504. (26) Prabhakaran, K.; Ogino, T. Surf. Sci. 1995, 325, 263.
Collections