Publication: Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires
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2009-04
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Academic Press Ltd- Elsevier Science Ltd
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Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires have been investigated by means of the secondary electrons and cathodoluminescence (CL) techniques in the SEM. Red and blue-UV emission bands appear as complex bands and their components are influenced by the presence of In or Al, leading to a blue-shift of the blue-UV band usually observed in undoped gallium oxide. These In and Al related changes in the luminescence features of doped Ga_2O_3 nanostructures are discussed.
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© 2008 Elsevier Ltd..
This work was supported by MEC (Project MAT 2006-01259)
International Workshop on Beam Injection Assessment of Microstructure in Semiconductors (9. 2008-2009. Toledo).
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