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Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices

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Nogales Díaz, Emilio and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and García, J. A. (2009) Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices. Nanotechnology, 20 (11). ISSN 0957-4484

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Official URL: http://iopscience.iop.org/0957-4484/20/11/115201


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Abstract

Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used as precursor material and annealed under an argon flow. In the other one, undoped ß-Ga2O3 nanostructures were first obtained by thermal oxidation of metallic gallium and europium was subsequently incorporated by a diffusion process. Room temperature luminescence at 610 nm due to Eu^(3+) intraionic transitions from ß-Ga_2O_3: Eu has been observed. Waveguiding of this red emitted light through the structures was shown.


Item Type:Article
Additional Information:

© 2009 IOP 1 Publishing Ltd.
This work has been supported by MEC (Project MAT 2006-01259).

Uncontrolled Keywords:Nanowires, Silicon
Subjects:Sciences > Physics > Materials
ID Code:24274
Deposited On:22 Jan 2014 17:23
Last Modified:13 Feb 2018 15:11

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