Publication: Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices
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2009-03-18
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Iop Publishing Ltd
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Abstract
Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used as precursor material and annealed under an argon flow. In the other one, undoped ß-Ga2O3 nanostructures were first obtained by thermal oxidation of metallic gallium and europium was subsequently incorporated by a diffusion process. Room temperature luminescence at 610 nm due to Eu^(3+) intraionic transitions from ß-Ga_2O_3: Eu has been observed. Waveguiding of this red emitted light through the structures was shown.
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© 2009 IOP 1 Publishing Ltd.
This work has been supported by MEC (Project MAT 2006-01259).
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