Publication: Visible and infrared luminescence study of Er doped β-Ga_2O_3 and Er_3 Ga_5O_12
Loading...
Official URL
Full text at PDC
Publication Date
2008-03-20
Advisors (or tutors)
Editors
Journal Title
Journal ISSN
Volume Title
Publisher
IOP Publishing Ltd
Citations
Exportar
Abstract
The luminescence properties of Er doped β-Ga_2O_3 and of the erbium gallium garnet Er_3 Ga_5O_12(ErGG) have been investigated both in the visible and in the infrared (IR) ranges by means of photoluminescence (PL). Doping of the β-Ga_2O_3 was obtained in two different ways: erbium ion implantation into β-Ga_2O_3 and high temperature annealing of a mixture of Er_2O_3 and Ga_2_O3 powders. X-ray diffraction shows that the latter samples present both β-Ga_2O_3 and ErGG phases. The PL studies demonstrate that the beta-Ga2O3 in these samples is doped with erbium. The differences in the luminescence emission and excitation peaks of the Er^3+ ions in these two hosts are studied through selective PL measurements. Strong near IR emission and weak green emission from Er^3+ in the β-Ga_2O_3 matrix is obtained. The opposite is obtained for Er^3+ in ErGG when excited under the same conditions. Room temperature luminescence is observed from erbium in the two hosts.
Description
© 2008 IOP Publishing Ltd.
This Work Has Been Supported By MEC (Project MAT 2006-01259). KL Acknowledges Support By FCT, Portugal.
UCM subjects
Unesco subjects
Keywords
Citation
[1] Yamaga M, Víllora E G, Shimamura K, Ichinose N and Honda M 2003 Phys. Rev. B 68 155207
[2] Miyata T, Nakatani T and Minami T 2000 J. Lumin. 87–89 1183
[3] Zhou X T, Heigl F, Ko J Y P, MurphyMW, Zhou J G, Regier T, Blyth R I R and Sham T K 2007 Phys. Rev. B 75 125303
[4] Binet L and Gourier D 1998 J. Phys. Chem. Solids 59 1241
[5] Nogales E, García J A, Méndez B and Piqueras J 2007 J. Appl. Phys. 101 033517
[6] Nogales E, M´endez B and Piqueras J 2005 Appl. Phys. Lett. 86 113112
[7] Nogales E, García J A, M´endez B and Piqueras J 2007 Appl. Phys. Lett. 91 133108
[8] Nogales E, M´endez B and Piqueras J 2008 Nanotechnology 19 035713
[9] Gollakota P, Dhawan A, Wellenius P, Lunardi L M, Muth J F, Saripalli Y N, Peng H Y and Everitt H O 2006 Appl. Phys. Lett. 88 221906
[10] Pang M L, Shen W Y and Lin J 2005 J. Appl. Phys. 97 033511
[11] Favennec P N, Haridon H L, Salvi M, Muotonnet D and Le Guillo Y 1989 Electron. Lett. 25 718
[12] Heikenfeld J, Lee D S, Garter M, Birkhahn R and Steckl A J 2000 Appl. Phys. Lett. 76 1365
[13] Lozykowski H J, Jadwisienczak W M and Brown I 1999 Appl. Phys. Lett. 74 1129
[14] Wang K, Martin R W, Nogales E, Edwards P R, O’Donnell K P, Lorenz K, Alves E and Watson I M 2006 Appl. Phys. Lett. 89 131912
[15] Nogales E, Méndez B, Piqueras J, Plugaru R, Coraci A and
García J A 2002 J. Phys. D: Appl. Phys. 35 295
[16] Polman A 1997 J. Appl. Phys. 82 1
[17] Przybylinska H, Jantsch W, Suprun-Belevitch Y, Stepikhova M, Palmetshofer L, Hendorfer G, Kozanecki A, Wilson R J and Sealy B J 1996 Phys. Rev. B 54 2532
[18] Orlich E and H¨ufner S 1969 J. Appl. Phys. 40 1503
[19] Guillot M, Schmiedel T and Xu Y 1998 J. Appl. Phys. 83 6762
[20] Gruber J B et al 2007 J. Appl. Phys. 101 023108
[21] Klik M A J, Gregorkiewicz T, Bradley I V and Wells J-P R 2002 Phys. Rev. Lett. 89 227401
[22] Henderson B and Imbusch G F 1989 Optical Spectroscopy of Inorganic Solids (Oxford: Clarendon)
[23] Dierolf V, Sandman C, Zavada J, Chow P and Hertog B 2004 J. Appl. Phys. 95 5464
[24] Muth J F, Gollakota P, Dhawan A, Porter H L, Saripalli Y N and Lunardi L M 2005 MRS Symp. Proc. 866 V6.2.1
[25] Wang J, Zhou M J, Hark S K, Li Q, Tang D, Chu M W and Chen C H 2006 Appl. Phys. Lett. 89 221917