Publication: Sn doped GeO_2 nanowires with waveguiding behavior
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2008-11-12
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Iop Publishing Ltd
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Abstract
Sn doped GeO_2 nanowires and microwires have been grown by an evaporation-deposition method, using a mixture of Ge and SnO_2 powders as precursors. Comparison with undoped GeO_2 nanowires grown by the same method shows that the presence of Sn prevents the formation of sharp bends, which makes the wires more suitable for waveguiding applications. Incorporation of about 0.5 at.% of Sn into the wires influences their morphology and gives rise to wires showing two different cross-sectional dimensions along the growth axis. Sn does not influence the luminescence spectra in the visible range but causes the appearance of emission bands in the near-infrared range. The waveguiding behavior of the Sn doped wires for green and red laser light has been demonstrated.
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© 2008 IOP Publishing Ltd.
This work was supported by MEC (Project MAT2006-01259).
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[1] Hidalgo P, Méndez B and Piqueras J 2007 Nanotechnology 18 155203
[2] Bai Z G, Yu D P, Zhang H Z, Ding Y, Wang Y P, Gai X Z, Hang Q L, Xiong G C and Feng S G 1999Chem. Phys. Lett. 303 311
[3] Tang Y H, Zhang Y F, Wang N, Bello I, Lee C S and Lee S 1999 Appl. Phys. Lett. 74 3824
[4] Dang H Y, Wang J and Fan S S 2003 Nanotechnology 14 738
[5] Hidalgo P, Méndez B and Piqueras J 2005 Nanotechnology 16 2521
[6] Nogales E, Méndez B and Piqueras J 2005 Appl. Phys. Lett. 86 113112
[7] Grym J, Fernández P and Piqueras J 2005 Nanotechnology 16 931
[8] Magdas D A, Cremades A and Piqueras J 2006 Appl. Phys. Lett. 88 113107
[9] Díaz-Guerra C and Piqueras J 2007 J. Appl. Phys. 102 084307
[10] Li S Y, Lin P, Lee C Y, Tseng T Y and Huang C J 2004 J. Phys. D: Appl. Phys. 37 2274
[11] Wang Q, Song Z T, Feng S L and Wang T H 2004 Appl. Phys. Lett. 85 4759
[12] Li S Y, Lee C Y, Lin P and Tseng T Y 2005 Nanotechnology 16 451
[13] Ortega Y, Fernández P and Piqueras J 2007 Nanotechnology 18 115606
[14] Wu J and Coffer J L 2007 Chem. Mater. 19 6266
[15] Li S Y, Lin P, Lee C Y, Tseng T Y and Huang C J 2004 J. Phys. D: Appl. Phys. 37 2274
[16] Wen J G, Lao J Y, Wang D Z, Kyaw T M, Foo Y L and Ren Z F 2003Chem. Phys. Lett. 372 717
[17] Lao J Y, Wen J G and Ren Z F 2002 Nano Lett. 2 1287
[18] Lao J Y, Huang J Y, Wang D Z and Ren Z F 2004 J. Mater. Chem. 14 770
[19] Gao P X and Wang Z L 2004 Appl. Phys. Lett. 84 2883
[20] Wang W, Wang K, Han D, Poudel B, Wang X, Wang D Z, Zeng B and Ren Z F 2007 Nanotechnology 18 075707