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Cathodoluminescence study of ytterbium doped GaSb



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Hidalgo Alcalde, Pedro and Méndez Martín, Bianchi and Ruiz, C. and Bermudez, V. and Piqueras de Noriega, Javier and Dieguez, E. (2005) Cathodoluminescence study of ytterbium doped GaSb. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 121 (1-feb). pp. 108-111. ISSN 0921-5107

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Official URL: http://www.sciencedirect.com/science/article/pii/S0921510705001947



b-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb_(3+) ions has been detected

Item Type:Article
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© 2005 Elsevier B.V. All rights reserved.
This work was supported by the EU (HPRN-CT-2001-00199) and MECD (MAT2003-00455).

Uncontrolled Keywords:Electrical-Properties, Gallium Antimonide, Crystals, Epitaxy
Subjects:Sciences > Physics > Materials
ID Code:24352
Deposited On:29 Jan 2014 15:40
Last Modified:07 Feb 2014 11:16

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