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Formation of porous layers on n-GaSb by electrochemical etching



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Storgards, J. and Méndez Martín, Bianchi and Piqueras de Noriega, Javier and Chenot, M. and Dimroth, F. and Bett, A.V. (2004) Formation of porous layers on n-GaSb by electrochemical etching. Semiconductor Science and Technology, 19 (7). pp. 902-905. ISSN 0268-1242

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Official URL: http://iopscience.iop.org/0268-1242/19/7/021



The effect of electrochemical etching of n-type GaSb in aqueous solutions of HCl and HF has been analysed. By anodization in HCl, two different morphologies of porous layers were observed depending on the current density. At low current density (0.5 mA cm_(-2)) a macroporous layer is formed with the pores following preferential directions, while at high current density (15 mA cm_(-2)) pores of sizes less than 100 nm were observed. Furthermore, a comparison between the luminescence in the porous layer and bulk GaSb is also performed. On the other hand, anodization in HF leads to an electropolishing process and no porosification is obtained.

Item Type:Article
Additional Information:

© 2004 IOP Publishing Ltd.
This work is carried out in the framework of a European Marie Curie project (HPMT-CT-2001-00215). Support of MCYT (MAT2003-00455) is acknowledged.

Uncontrolled Keywords:Silicon, Gaas, Cathodoluminescence, Semiconductors, Surface, Inp, Photoluminescence, Initiation, Growth, Pores
Subjects:Sciences > Physics > Materials
ID Code:24369
Deposited On:29 Jan 2014 16:07
Last Modified:07 Feb 2014 11:16

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