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Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope

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StorgardsStorgards, J. y Méndez Martín, Bianchi y Piqueras de Noriega, Javier y Storgards, M. y Dimroth, F. y Bett, A.W. (2004) Characterization of GaSb-based heterostructures by scanning electron microscope cathodoluminescence and scanning tunnelling microscope. Journal of Physics: Condensed Mater, 16 (2, 17S). ISSN 0953-8984

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URL Oficial: http://iopscience.iop.org/0953-8984/16/2/030


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Resumen

The luminescence of GaSb and AlGaSb layers grown on GaAs substrates by metal organic vapour phase epitaxy has been studied by means of cathodoluminescence (CL) rising a scanning electron microscope. CL plane-view analysis reveals a distribution of defects, as misfit dislocations, in some of the structures. The luminescence bands observed in the GaSb layers are related to near band edge recombination and to an excess of Ga. In the case of AlGaSb/GaSb heterostructure emission bands related to the ternary compound and to donor-acceptor recombination are detected. In addition, with the aid of a scanning tunnelling microscope (STM), local electronic properties, such as conductance and surface energy gap, were studied in sample cross-sections. The results obtained from imaging and spectroscopy modes of STM enabled us to image the single AlGaSb layer.


Tipo de documento:Artículo
Información Adicional:

© 2004 IOP Publishing Ltd.
This work was carried out in the framework of a European network project (HPRN-CT-2001-00199). Partial support of
MCYT (MAT2000-2119) is acknowledged.
International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, (BIAMS 2003) (7. 2003. Lille, Francia)

Palabras clave:Vapor-Phase Epitaxy, Si(111)2x1 Surface, Doped Gasb, Photoluminescence, Spectroscopy, Growth
Materias:Ciencias > Física > Física de materiales
Código ID:24390
Depositado:29 Ene 2014 16:15
Última Modificación:20 May 2014 08:33

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